Method of fabricating a finfet device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJoanna Chaw Yane YIN, Chi-Hsi WU, Kuo-Chiang TING, Kuang-Hsin CHEN
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Abstract
In an embodiment, a method for fabricating a FinFET device includes providing a semiconductor substrate, etching the semiconductor substrate to form dummy fins and active fins. The group of dummy fins is etched through a patterned mask layer. An isolation feature is formed on the semiconductor substrate after etching the first group of dummy fins.
Claims20
A method for fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- providing a semiconductor substrate;
- etching the semiconductor substrate to form a first fin structure and a second fins structure;
- masking the second fin structure;
- etching the first fin structure while masking the second fin structure, wherein the etching the first fin structure reduces a height of the first fin structure;
- after the etching, forming an insulating material over the semiconductor substrate in an area previously occupied by the first fin structure.
A method for fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- providing a semiconductor substrate,
- forming dummy fins and active fins on the semiconductor substrate,
- forming a gate structure on at least one of the active fins;
- and
- after forming the gate structure on the at least one active fin, etching the dummy fins to reduce a height of each of the dummy fins.
A method for fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- providing a semiconductor substrate;
- forming dummy fins and active fins on the semiconductor substrate;
- forming a patterned masking layer on the active fins to expose a portion of the dummy fins;
- etching the exposed portion of the dummy fins to form an open-spacing between the active fins and a remaining portion of the dummy fins, wherein the remaining portion of the dummy fins have a first height and the active fins have a second height that is different than the first height;
- and
- forming a shallow trench isolation (STI) structure after forming the open-spacing.
Dependencies are inferred from the claim text.