Method of forming a pattern
AssigneeSamsung Electronics Co., Ltd.
InventorJongchul PARK
Life of this patent
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Abstract
A method of forming a pattern includes forming a lower layer on a substrate, forming a mask pattern on the lower layer, the mask pattern extending in a first direction parallel to a top surface of the substrate, and performing an etching process using an ion beam on the substrate, such that the ion beam is irradiated in parallel to a plane defined by the first direction and a direction perpendicular to the top surface of the substrate, and is irradiated at a tilt angle with respect to the top surface of the substrate, wherein performing the etching process includes adjusting the tilt angle of the ion beam to selectively etch the lower layer or the mask pattern.
Claims20
A method of forming a pattern, the method comprising:
- forming a lower layer on a substrate;
- forming a mask pattern on the lower layer, the mask pattern extending in a first direction parallel to a top surface of the substrate;
- and
- performing an etching process using an ion beam on the substrate, such that the ion beam is irradiated in parallel to a plane defined by the first direction and a direction perpendicular to the top surface of the substrate, and is irradiated at a tilt angle with respect to the top surface of the substrate,
- wherein performing the etching process includes adjusting the tilt angle of the ion beam to selectively etch the lower layer or the mask pattern.
A method of forming a pattern, the method comprising:
- forming a lower layer on a substrate;
- forming mask patterns on the lower layer, the mask patterns extending in a first direction and being spaced apart from each other in a second direction intersecting the first direction;
- and
- performing an etching process using an ion beam on the substrate,
- wherein the first direction and the second direction are parallel to a top surface of the substrate,
- wherein the ion beam is irradiated at a tilt angle with respect to the top surface of the substrate, and
- wherein performing the etching process includes adjusting the tilt angle of the ion beam to selectively etch the lower layer or the mask patterns.
Dependencies are inferred from the claim text.