Memory device and operating method thereof
AssigneeSK hynix Inc.
InventorHee Youl LEE
Life of this patent
Estimating the term…
Abstract
Disclosed are a memory device, including: a memory block including a plurality of cell strings; a peripheral circuit configured to set voltages for a program operation of selected memory cells in the cell strings, and program the selected memory cells by using the set voltages; and a control circuit configured to control the peripheral circuit so that the selected memory cells are programmed in response to a program command, and increase a channel voltage of non-selected cell strings including non-selected memory cells while the selected memory cells are programmed, and an operating method thereof.
Claims27
A memory device, comprising:
- a memory block including a plurality of cell strings;
- a peripheral circuit configured to set voltages for a program operation of selected memory cells in the cell strings, and program the selected memory cells by using the set voltages;
- and
- a control circuit configured to control the peripheral circuit for programming the selected memory cells in response to a program command, and to increase a channel voltage of non-selected cell strings including non-selected memory cells while the selected memory cells are programmed.
1-10. (canceled)
An operating method of a memory device, comprising:
- comparing a pre-set program operation condition with a program operation condition;
- maintaining a channel voltage of non-selected cell strings with a set-up level when the program operation condition is lower than the pre-set program operation condition as a result of the comparison;
- increasing the channel voltage when the program operation condition is equal to or higher than the pre-set program operation condition;
- and
- programming selected memory cells included in selected cell strings based on one of the maintained channel voltage and the increased channel voltage.
An operating method of a memory device, comprising:
- comparing a pre-set program operation condition with a program operation condition;
- maintaining a channel voltage of non-selected cell strings with a set-up level when the program operation condition is lower than the pre-set program operation condition as a result of the comparison;
- increasing the channel voltage when the program operation condition is equal to or higher than the pre-set program operation condition;
- and
- programming selected memory cells included in selected cell strings based on one of the maintained channel voltage and the increased channel voltage.
An operating method of a memory device, comprising:
- increasing a voltage applied to channels of non-selected cell strings during a program operation according to an increase of at least one of a target voltage, a verify voltage, and the program time of the program operation;
- and
- programming selected memory cells based on the increased voltage.
17-19. (canceled)
Dependencies are inferred from the claim text.