Nonvolatile memory device and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSu-chang JEON, Kui-han Ko, Dong-hun Kwak, Jin-young Kim
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Abstract
Provided is a method performed by a nonvolatile memory device, the method may include: initiating a first program operation corresponding to a first program loop among a plurality of program loops; receiving a suspend command for an urgent read operation during the first program operation; determining a recovery timing from either of a first timing contemporaneous with the receiving the suspend command, and a second timing after completion of the first program operation, based on the suspend command; and initiating a recovery at the determined recovery timing by applying a recovery voltage to a selected word line.
Claims20
A method performed by a nonvolatile memory device, the method comprising:
- initiating a first program operation corresponding to a first program loop among a plurality of program loops;
- receiving a suspend command for an urgent read operation during the first program operation;
- determining a recovery timing from either of a first timing contemporaneous with the receiving the suspend command, and a second timing after completion of the first program operation, based on the suspend command;
- and
- initiating a recovery at the determined recovery timing by applying a recovery voltage to a selected word line.
A method performed by a nonvolatile memory device, the method comprising:
- increasing a voltage level of a selected word line by sequentially applying a plurality of stepwise increasing supply voltages to the selected word line corresponding to a program command;
- receiving a suspend command for an urgent read operation during the increasing;
- determining a recovery mode in response to a recovery timing based on the suspend command;
- performing a recovery according to the determined recovery mode;
- and
- performing the urgent read operation in response to a read command,
- wherein the recovery mode is either of a cancel mode in which the recovery is performed contemporaneous with the receiving the suspend command and a loop mode in which the recovery is performed after increasing the voltage level of the selected word line to a target voltage.
A nonvolatile memory device comprising:
- at least one processor executing computer-readable instructions stored in non-transitory computer readable storage configured to
- apply a program voltage to a selected word line for increasing a voltage level of the selected word line to perform a program operation in response to a program command,
- apply a recovery voltage to the selected word line according to a recovery mode in response to receiving a suspend command for an urgent read operation during the program operation, and
- determine the recovery mode based on the received suspend command,
- wherein the recovery mode is either of a cancel mode in which the recovery voltage is applied before a first program loop corresponding to the program command is complete, and a loop mode in which the recovery voltage is applied after the first program loop is complete.
Dependencies are inferred from the claim text.