Performance improvement of euv photoresist by ion implantation
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsTristan Y. Ma, Huixiong Dai, Anthony Renau, John Hautala, Joseph Olson
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Abstract
A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.
Claims19
A method of patterning a substrate, comprising:
- providing a blanket photoresist layer on the substrate;
- performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in an extreme ultraviolet (EUV) range;
- and
- subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.
A method of enhancing a photoresist layer, comprising:
- applying the photoresist layer as a blanket photoresist layer on a substrate;
- and
- prior to patterning the blanket photoresist layer, performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in an extreme ultraviolet (EUV) range, the enhanced absorption efficiency being greater than 2×106 cm2/mol.
A method of improved patterning of a photoresist layer, comprising:
- providing an underlayer on a substrate;
- performing an ion implantation procedure of an implant species into the underlayer, the implant species comprising an enhanced absorption efficiency at a wavelength in an extreme ultraviolet (EUV) range, the enhanced absorption efficiency being greater than 2×106 cm2/mol;
- applying the photoresist layer as a blanket photoresist layer on the underlay;
- and
- patterning the blanket photoresist layer by exposure to EUV radiation.
Dependencies are inferred from the claim text.