Polymer, positive resist composition, and method of forming resist pattern
AssigneeZeon Corporation
InventorManabu HOSHINO
Life of this patent
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Abstract
A polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, wherein at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom. In the formulae, R1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, R3 to R6, R8, and R9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p+q=5.
Claims9
A polymer comprising:
- a monomer unit (A) represented by general formula (I), shown below,
- where, in general formula (I), R1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, and R3 and R4 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group and may be the same or different;
- and
- a monomer unit (B) represented by general formula (II), shown below,
- where, in general formula (II), R5, R6, R8, and R9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group and may be the same or different, R7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p+q=5, wherein
- at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom.
Dependencies are inferred from the claim text.