Semiconductor x-ray detector capable of dark current correction

Abstract

Disclosed herein is a method to measure an intensity distribution of X-ray using an X-ray detector, the method comprising: determining values of dark current at at least three locations on the X-ray detector, wherein the three locations are not on a straight line; determining a spatial variation of absorptance of the X-ray using the values of the dark current; measuring an apparent intensity distribution of the X-ray; determining the intensity distribution by removing a contribution of the spatial variation the absorptance from the apparent intensity distribution.

Dependencies are inferred from the claim text.