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US 2019/0056448 A1Published application
Testing mos power switches
AssigneeInfineon Technologies AG
InventorMichael Asam
Life of this patent
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Abstract
Methods and devices are discussed relating to testing of MOS switch transistors. For example, at least two different test measurements may be performed, and a fault state may be determined based on the at least two test measurements.
Claims36
A method, comprising:
- performing at least two test measurements on a switch device, the switch device comprising at least one switch transistor, wherein the at least two test measurements are selected from the group consisting of:
- determining a measure of a gate capacitance of the at least one switch transistor,
- determining a measure of a drain-source voltage of the at least one switch transistor,
- determining a measure of a source voltage of the at least one switch transistor,
- testing a shunt resistor of the switch device, and
- determining a measure of a voltage drop across the shunt resistor, and
- determining a fault state of the transistor switch device based on the at least two test measurements.
4 more elements
A method, comprising:
- applying a test current to a switch device comprising at least one switch transistor, the test current having a magnitude selected essentially not to disturb normal operation of the switch device,
- measuring a voltage in response to the test current, and determining a fault state of the switch device based on the measured voltage.
A method, comprising:
- determining a drain-source voltage of at least one switch transistor,
- determining a voltage across a shunt resistor coupled to the at least one switch transistor, and
- evaluating a ratio between the drain-source voltage and the voltage across the shunt resistor.
A device, comprising:
- a test current generator configured to apply a test current to a switch device comprising at least one switch transistor, the test current having a magnitude selected essentially not to disturb normal operation of the switch device,
- a voltage measurement circuit configured to measure a voltage in response to the test current, and
- an evaluation circuit configured to determine a fault state of the switch device based on the measured voltage.
A device, comprising:
- a measurement circuit configured to determine a drain-source voltage of at least one switch transistor, and to determine a voltage across a shunt resistor coupled to the at least one switch transistor, and
- an evaluation circuit configured to evaluate a ratio between the drain-source voltage and the voltage across the shunt resistor.
Dependencies are inferred from the claim text.