Integrated circuit device with adaptations for multiplexed biosensing

A method of manufacturing an integrated circuit device, comprising:

• providing a substrate comprising a device layer;
• forming source/drain regions, temperature sensors, and heating elements in the device layer, wherein channel regions are formed in the device layer between adjacent source/drain regions, and wherein each of the heating elements is aligned over at least a portion of a corresponding temperature sensor;
• forming a metal interconnect structure over a front side of the device layer, wherein the metal interconnect structure forms contacts with the source/drain regions, the temperature sensors, and the heating elements;
• exposing the channel regions from a back side of the device layer;
• and
• forming a fluid gate dielectric over the exposed channel regions.

A method of manufacturing an integrated circuit device, comprising:

• providing a substrate comprising a semiconductor active layer having a front side and a back side;
• forming a heating element on a front side of the semiconductor active layer;
• forming source/drain regions and a temperature sensor in the semiconductor active layer, wherein the temperature sensor is formed such that the heating element is aligned over at least a portion of the temperature sensor;
• exposing a portion of the semiconductor active layer between the source/drain regions from a back side of the semiconductor active layer;
• and
• forming a fluid gate dielectric over the exposed portion of the semiconductor active layer.