Precursor Supply Unit, Substrate Processing System, and Method of Fabricating Semiconductor Device Using the Same

A substrate processing system, comprising:

• a chamber comprising a susceptor, which is configured to receive a substrate;
• a precursor supply unit supplying a precursor onto the substrate;
• and
• a carrier gas supply unit supplying a carrier gas, which is used to deliver the precursor in the chamber, into the precursor supplying unit,
• wherein the precursor supply unit comprises:
• an outer container;
• an inner container provided in the outer container and capable of storing a precursor source;
• a gas injection line having an injection port, the gas injection line provided below the inner container and in the outer container;
• and
• a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container,
• wherein the inner container comprises a supporting membrane supporting the precursor source and having pores that are permeable to the carrier gas and the precursor, and
• wherein the supporting membrane provides a precursor passage space defined by a first internal space between an inner bottom of the outer container and a bottom surface of the supporting membrane.

A method of fabricating a semiconductor device, comprising:

• providing a precursor and a carrier gas on a substrate in a chamber;
• and
• providing a reaction gas, which is reacted with the precursor, on the substrate to form a thin film on the substrate through reaction with the precursor,
• wherein providing the precursor and the carrier gas comprises:
• supplying a carrier gas into a precursor passage space between a supporting membrane of an inner container and an inner bottom surface of an outer container, the inner container containing a precursor source;
• providing the carrier gas to the precursor source on the supporting membrane through pores of the supporting membrane;
• and
• obtaining the precursor through the pores using the carrier gas, without a reduction in supply pressures of the carrier gas and the precursor according to consumption of the precursor source in the inner container.