Substrate processing apparatus and method of cleaning the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSukjin Chung, Bongjin Kuh, Kook Tae Kim, In-Sun Yi, Soojin Hong
Life of this patent
Estimating the term…
Abstract
Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.
Claims21
A substrate processing apparatus comprising:
- a process chamber;
- a support unit in the process chamber and configured to support a substrate;
- and
- a gas injection unit in the process chamber,
- wherein the gas injection unit comprises:
- a first injection portion configured to inject a source gas;
- a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas;
- and
- a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.
A substrate processing apparatus comprising:
- a process chamber;
- a source gas supply containing a source gas;
- a reaction gas supply containing a reaction gas;
- a cleaning gas supply containing a cleaning gas;
- a support unit in the process chamber and configured to support a substrate;
- and
- a gas injection unit in the process chamber,
- wherein the gas injection unit comprises:
- a source gas injection portion in fluid communication with the source gas supply and configured to inject the source gas;
- a reaction gas injection portion in fluid communication with the reaction gas supply and configured to inject the reaction gas that reacts with the source gas, wherein the source gas injection portion and the reaction gas injection portion are on opposite sides of the process chamber;
- and
- a cleaning gas injection portion in fluid communication with the cleaning gas supply and configured to inject the cleaning gas that removes a reactant produced from the source gas and the reaction gas.
A substrate processing apparatus comprising:
- a process chamber;
- a support unit in the process chamber and configured to support a substrate;
- and
- a gas injection unit comprising a cleaning gas injection portion configured to provide the process chamber with a cleaning gas that removes a reactant on the process chamber,
- wherein the reactant comprises aluminum oxide (Al2O3), and
- wherein the cleaning gas comprises CHxCly (where, x=0 to 4 and y=4−x) or SiHxCly (where, x=0 to 4 and y=4−x).
21-30. (canceled)
Dependencies are inferred from the claim text.