Method for producing crystalline film
AssigneesFlosfia Inc., National Institute for Materials Science
InventorsYuichi OSHIMA, Katsuaki KAWARA, Takashi SHINOHE, Tokiyoshi MATSUDA, Toshimi HITORA
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Abstract
According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes gasifying a metal source to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.
Claims20
A method for producing a crystalline film comprising:
- gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
- supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate;
- and
- supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.
A method for producing a crystalline film comprising:
- forming an uneven portion on a surface of a substrate;
- gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
- supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the uneven portion on the surface of the substrate;
- and
- supplying a reactive gas into the reaction chamber onto the uneven portion on the surface of the substrate to form a crystalline film under a gas flow of the reactive gas.
A method for producing a crystalline film comprising:
- forming a buffer layer on at least a surface of the substrate by use of a mist chemical vapor deposition method;
- forming an uneven portion on a surface of the buffer layer;
- gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
- supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the uneven portion on the surface of the buffer layer of the substrate;
- and
- supplying a reactive gas into the reaction chamber onto the uneven portion on the surface of the buffer layer of the substrate to form a crystalline film under a gas flow of the reactive gas.
Dependencies are inferred from the claim text.