US 2019/0055155 A1 · Passivation Glasses For Semiconductor Devices

Abstract

A passivation glass coating composition is provided for forming a fired passivation glass layer on a semiconductor substrate having p-n junction. The passivation glass coating composition includes a glass component that is lead free, cadmium free, alkali metal oxides free, and colored transition metal oxides (i.e. metal oxides of V, Fe, Co, Ni, Cr, Cu, Mn) free. The glass component includes bismuth based glasses, and provides a firing temperature range of 500° C. to 900° C., and controlled devitrification. Once fired to a semiconductor device, the fired passivation glass layer provides exceptional device performance including no cracking of the fired passivation glass layer, excellent thermal expansion matching to silicon, good chemical resistance to acid and base, and improved device performance.

Claims21

Dependent claims

A semiconductor device including a semiconductor including a p-n junction, and a passivation glass layer fired on the semiconductor and covering a periphery of the p-n junction, wherein prior to firing, the passivation glass layer includes a glass component comprising:

5-56 mole % Bi2O3,
15-60 mole % ZnO,
0.1-43 mole % B2O3,
0.1-15 mole % Al2O3,
4-53 mole % SiO2, and
1.5-43 mole % total R2O3, wherein R represents trivalent ions selected from the group consisting of B3+, Al3+, La3+, Y3+, Ga3+, In3+, Sc3+, and lanthanide ions from Ce3+ to Lu3+, and excluding color producing transition metal ions Mn3+, Fe3+, Cr3+, V3+, Co3+.

3 more elements

Dependencies are inferred from the claim text.

Passivation Glasses For Semiconductor Devices

Life of this patent

Passivation Glasses For Semiconductor Devices

Life of this patent

Abstract

Claims21