Formation of Interlayer Covalent Bonds in Bilayer, Trilayer and Multilayer Graphene
AssigneeUniversity of Massachusetts
InventorsChristos Dimitrakopoulos, Dimitrios Maroudas, Yuxi Wang
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AssigneeUniversity of Massachusetts
InventorsChristos Dimitrakopoulos, Dimitrios Maroudas, Yuxi Wang
Estimating the term…
An embodiment according to the invention provides methods for making interlayer covalent bonds in bilayer, trilayer, and multilayer graphene. Raman spectroscopy is used to characterize the resulting material, and the Raman peak at approximately 1330 cm−1 coincides with the characteristic peak of diamond and polycrystalline nanodiamond peaks published in the art. This indicates that the process induces the formation of sp3 carbon-carbon (C—C) bonds (similar to the ones in diamond) between the graphene layers. The graphene bilayer or multilayer converts to sp3 bonded carbon only partially, as the Raman spectrum also indicates a strong component of graphene still remaining in the bilayer or multilayer.
A method of forming an interlayer bond between two or more layers of graphene, the method comprising:
A method of breaking the planar configuration of graphene in at least a portion of the area of at least two different neighboring layers of graphene to create sp3 configuration bonds and thereby to create a tetrahedral geometry in at least portion of the carbon atoms of each of the neighboring layers of graphene, the method comprising:
Dependencies are inferred from the claim text.