Apparatus and techniques for decelerated ion beam with no energy contamination
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsFrank Sinclair, Daniel Tieger, Klaus Becker
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Abstract
An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
Claims16
An ion implantation system, comprising:
- an ion source to generate an ion beam;
- a substrate stage disposed downstream of the ion source;
- a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage;
- and
- a gas source, the gas source to provide hydrogen gas or helium gas to the deceleration stage,
- wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
A method of ion implantation, comprising:
- generating an ion beam;
- decelerating the ion beam in a deceleration stage;
- altering a trajectory of the ion beam during the decelerating;
- and
- directing hydrogen gas or helium gas into the deceleration stage during the decelerating.
An ion implantation system, comprising:
- a beamline, the beamline comprising:
- an ion source to generate an ion beam, the ion beam comprising an implant species;
- a substrate stage disposed downstream of the ion source;
- a deceleration stage, the deceleration stage disposed between the ion source and substrate stage;
- and
- a gas source, the gas source coupled to provide hydrogen gas to the beamline at a designed partial pressure,
- wherein the implant species is scattered at an angle of no more than 5 degrees during collisions with the hydrogen gas.
A method of ion implantation, comprising:
- generating an ion beam, the ion beam comprising an implant species;
- conducting the ion beam along a beamline using a plurality of beamline components;
- decelerating the ion beam in a deceleration stage;
- and
- directing hydrogen gas to the beamline at a designed partial pressure,
- wherein the implant species is scattered at an angle of no more than 5 degrees during collisions with the hydrogen gas.
Dependencies are inferred from the claim text.