Method for manufacturing photosemiconductor, photosemiconductor and hydrogen production device

Abstract

The method for manufacturing a photosemiconductor according to the present disclosure includes treating a metal base material containing at least one kind of transition metal with a plasma under a pressure lower than atmospheric pressure and at a temperature lower than a volatilization temperature of the transition metal under an atmosphere at the pressure to provide the photosemiconductor containing the transition metal and a nitrogen element from at least a part of the metal base material. Here, the plasma is generated by applying a high-frequency voltage at a frequency in a range of not less than 30 MHz and not more than 300 MHz to a gas between a first electrode and a second electrode, and the gas is any one of: (i) a nitrogen gas; (ii) a gaseous mixture consisting of a nitrogen gas and an oxygen gas; (iii) a gaseous mixture consisting of a nitrogen gas and a rare gas; and (iv) a gaseous mixture consisting of a nitrogen gas, an oxygen gas, and a rare gas.

Dependencies are inferred from the claim text.