Memory cells and devices
AssigneeXerox Corporation
InventorsJin Wu, Lin Ma
Life of this patent
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Abstract
Disclosed are memory cells that include a crosslinked mixture of a photoinitiator, a polyether-modified acrylate oligomer, a polyester acrylic resin, and a component selected from the group consisting of a silicone acrylate oligomer, and a fluorinated acrylate oligomer, and memory devices that contain a plurality of memory cells.
Claims21
A memory cell comprising a crosslinked mixture of a polyether-modified acrylate oligomer, a polyester acrylic resin, and a component selected from the group consisting of a silicone acrylate oligomer, a fluorinated acrylate oligomer, and a photoinitiator.
A memory cell comprising in sequence a flexible substrate layer, a first electrode in contact with said substrate layer, a ferroelectric memory layer, a second electrode in contact with said ferroelectric memory layer, and in contact with said second electrode a protective layer comprised of a crosslinked mixture of a polyether-modified acrylate oligomer, a polyester acrylic resin, a component selected from the group consisting of a silicone acrylate oligomer, and a fluorinated acrylate oligomer and a photoinitiator, and which protective layer is in contact with said second electrode.
A memory device comprising a plurality of memory cells wherein each memory cell comprises a flexible substrate layer, a first electrode in contact with said substrate layer, a ferroelectric memory layer in contact with said first electrode, a second electrode in contact with said ferroelectric layer, and a protective layer in contact with said second electrode, and wherein said protective layer comprises a crosslinked mixture comprising a polyether-modified acrylate oligomer, a polyester acrylic resin, a component selected from the group consisting of a silicone acrylate oligomer, and a fluorinated acrylate oligomer, and a photoinitiator.
Dependencies are inferred from the claim text.