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US 2019/0004020 A1Published application
Bimetal doped-metal oxide-based chemical sensors
AssigneeVaon, LLC
InventorsVladimir Dobrokhotov, Alexander Larin
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Abstract
The present invention generally relates to bimetal-doped, metal oxide-based sensors and platforms and integrated chemical sensors incorporating the same, methods of making the same, and methods of using the same.
Claims21
A chemical sensor platform, comprising:
- (a) an oxidized silicon membrane, comprising a silicon (Si) layer and a silicon oxide (SiO2) layer, wherein the SiO2 layer is located on top of the silicon layer and, comprises:
- a plurality of separate sensor areas;
- (b) at least one heating element in contact with the SiO2 layer and located near at least one edge of each sensor area;
- (c) a plurality of pairs of electrical leads, each in contact with the SiO2 layer, wherein 1 pair of electrical leads is at least partly located on each of the separate sensor areas;
- (d) a plurality of metal oxide layers, wherein 1 metal oxide layer is located on each of the plurality of sensor areas and is in contact with at least a part of the pair of electrical leads located on the same area;
- and,
- (e) a plurality of bimetal layers, wherein 1 bimetal layer is located in each sensor area and is in contact with the metal oxide layer in that area, wherein the bimetal layer, comprises:
- Au and Pd or Au and Pt.
5 more elements
Dependencies are inferred from the claim text.