Deposition methodology for superconductor interconnects
AssigneeNorthrop Grumman Systems Corporation
InventorsCHRISTOPHER F. KIRBY, VIVIEN M. LUU, MICHAEL RENNIE, SEAN R. MCLAUGHLIN
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Abstract
A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.
Claims21
A method of forming a superconductor interconnect structure, the method comprising:
- forming a dielectric layer overlying a substrate;
- forming an interconnect opening in the dielectric layer;
- moving the substrate to a deposition chamber;
- and
- depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.
A method of forming a superconductor dual damascene structure, the method comprising:
- forming a second dielectric layer over a first dielectric layer having a first superconducting element;
- etching a contact opening in the second dielectric layer that extends to and exposes the first superconducting element in the first dielectric layer;
- etching a conductive line opening in the second dielectric layer that overlies the contact opening to form a dual damascene structure having a dual damascene opening;
- moving the dual damascene structure to reside on a temperature control chuck in a deposition chamber;
- setting the temperature to the temperature controlled chuck at or below a predetermined temperature;
- and
- depositing a superconducting metal in the dual damascene opening while in the deposition chamber to form a dual damascene structure comprised of a contact and a second conductive line overlying and coupled to the contact, such that the contact connects the first conductive line to the second conductive line through the second dielectric layer, wherein the depositing the superconducting metal comprises performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below the predetermined temperature until the superconducting metal has a desired thickness.
Dependencies are inferred from the claim text.