Extreme Ultraviolet Photoresist and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Hao Chen, Wei-Han Lai, Chien-Wei Wang, Chin-Hsiang Lin
Life of this patent
Estimating the term…
Abstract
Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.
Claims20
A resist material with enhanced sensitivity to radiation, the resist material comprising:
- a polymer;
- a sensitizer;
- and
- a photo-acid generator (PAG) that includes a cation and an anion, wherein the cation of the PAG includes a sulfur chemically bonded to a first phenyl ring and a second phenyl ring, and further wherein the cation of the PAG further includes a chemical group that chemically bonds the first phenyl ring to the second phenyl ring.
A resist material with enhanced sensitivity to radiation, the resist material comprising:
- a polymer;
- a sensitizer configured to generate a secondary radiation in response to the radiation;
- and
- a photo-acid generator (PAG) configured to generate acid in response to the radiation and the secondary radiation, wherein the PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, wherein the first phenyl ring is connected to the second phenyl ring.
A resist material with enhanced sensitivity to extreme ultraviolet (EUV) radiation, the resist material comprising:
- a polymer;
- a sensitizer configured to generate electrons upon absorbing the EUV radiation;
- and
- a photo-acid generator (PAG) configured to generate acid upon absorbing the electrons, wherein the PAG includes a triphenylsulfonium-based cation that includes a first phenyl ring connected to a second phenyl ring.
Dependencies are inferred from the claim text.