# US 2018/0323573 A1 · Semiconductor laser and method of producing a semiconductor laser and wafer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323573 A1 - Document ID: US20180323573A1 - Status: Published application - Kind: A1 - Application number: 15/773,592 - Filed: 2016-11-04 - Published: 2018-11-08 - Earliest claimed: 2015-11-06 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Sven Gerhard; Clemens Vierheilig; Andreas Loeffler - Web page: https://patentgrep.com/patent/US20180323573A1 ## CPC - H01S 5/0202: {Cleaving} - H01S 5/0234: Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings - H01S 5/02461: {Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity} - H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) - H01S 5/22: having a ridge or stripe structure - H01S 5/04252: {characterised by the material} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract A semiconductor laser includes a semiconductor layer sequence, an active zone, a ridge waveguide as an elevation of a top side of the semiconductor layer sequence, the longitudinal axis of which is oriented along the active zone, a contact metalization, and a current flow layer in direct contact with the contact metalization, wherein the top side of the semiconductor layer sequence includes a section adjoining one of the two facets over the width of the section relative to a longitudinal axis of the ridge waveguide, the section includes a subsection of the top side of the ridge waveguide, the subsection adjoins one of two facets over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer. ## Claims ### Claim at position 1 1-15. (canceled) ### Claim 16 A semiconductor laser comprising: a semiconductor layer sequence comprising two opposite facets defining a resonator, and an active zone configured between the two facets, a ridge waveguide configured from the semiconductor layer sequence as an elevation of a top side of the semiconductor layer sequence, said elevation lying above the active zone, and the longitudinal axis of which is oriented along the active zone, a contact metalization applied on a top side of the ridge waveguide facing away from the active zone, and a current flow layer in direct contact with the contact metalization, wherein the top side of the semiconductor layer sequence comprises a section adjoining one of the two facets over the width of said section relative to a longitudinal axis of the ridge waveguide, the section comprises a subsection of the top side of the ridge waveguide, the subsection extends in a manner adjoining said one of the two facets over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer. ### Claim 17 (depends on 16) The semiconductor laser according to claim 16, wherein the width of the section relative to the longitudinal axis of the ridge waveguide is 30 μm to 80 μm. ### Claim 18 (depends on 16) The semiconductor laser according to claim 16, wherein a length of the section relative to the longitudinal axis of the ridge waveguide is 5 μm to 50 μm. ### Claim 19 (depends on 16) The semiconductor laser according to claim 16, wherein relative to the longitudinal axis of the ridge waveguide a respective width of said one or said plurality of current flow layer sections is 30 μm to 100 μm. ### Claim 20 (depends on 16) The semiconductor laser according to claim 16, wherein at least one further current flow layer spaced apart from the current flow layer is applied on the top side of the semiconductor layer sequence. ### Claim 21 (depends on 20) The semiconductor laser according to claim 20, wherein a respective width of the at least one further current flow layer relative to the longitudinal axis of the ridge waveguide is 10 μm to 40 μm. ### Claim 22 (depends on 16) The semiconductor laser according to claim 16, wherein the section comprises a quadrilateral shape, one side of the quadrilateral is delimited by the facet, and the other three sides of the quadrilateral shape are delimited by the current flow layer sections of the current flow layer. ### Claim 23 A method of producing a semiconductor laser comprising: providing a semiconductor layer sequence comprising an active zone, wherein the semiconductor layer sequence comprises a ridge waveguide configured from the semiconductor layer sequence as an elevation of a top side of the semiconductor layer sequence, said elevation lying above the active zone, and the longitudinal axis of which is oriented along the active zone, wherein a contact metalization is applied on a top side of the ridge waveguide facing away from the active zone, defining two breaking lines extending transversely with respect to the longitudinal axis of the ridge waveguide and parallel to the top side of the semiconductor layer sequence, applying a current flow layer on the semiconductor layer sequence such that, after the applying, the current flow layer is in direct contact with the contact metalization, wherein the top side of the semiconductor layer sequence comprises a section adjoining one of the two breaking lines over the width of said section relative to a longitudinal axis of the ridge waveguide, the section comprises at least one subsection of the top side of the ridge waveguide, the subsection extends in a manner adjoining said one of the two breaking lines over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer, and breaking the semiconductor layer sequence along the two breaking lines such that two opposite facets defining a resonator are formed along the two breaking lines, wherein the active zone is configured between the two facets. ### Claim 24 (depends on 23) The method according to claim 23, wherein the width of the section relative to the longitudinal axis of the ridge waveguide is 30 μm to 80 μm. ### Claim 25 (depends on 23) The method according to claim 23, wherein a length of the section relative to the longitudinal axis of the ridge waveguide is 5 μm to 50 μm. ### Claim 26 (depends on 23) The method according to claim 23, wherein relative to the longitudinal axis of the ridge waveguide a respective width of said one or said plurality of current flow layer sections is 30 μm to 100 μm. ### Claim 27 (depends on 23) The method according to claim 23, wherein at least one further current flow layer spaced apart from the current flow layer is applied on the top side of the semiconductor layer sequence. ### Claim 28 (depends on 26) The method according to claim 26, wherein a respective width of the at least one further current flow layer relative to the longitudinal axis of the ridge waveguide is 10 μm to 40 μm. ### Claim 29 (depends on 23) The method according to claim 23, wherein the section comprises a quadrilateral shape, one side of the quadrilateral is delimited by the facet, and the other three sides of the quadrilateral shape are delimited by the current flow layer sections of the current flow layer. ### Claim 30 A wafer comprising: a semiconductor layer sequence comprising an active zone, wherein the semiconductor layer sequence comprises a ridge waveguide configured from the semiconductor layer sequence as an elevation of a top side of the semiconductor layer sequence, said elevation lying above the active zone, and the longitudinal axis of which is oriented along the active zone, and a contact metalization is applied on a top side of the ridge waveguide facing away from the active zone, two breaking trenches defining two breaking lines extending transversely with respect to the longitudinal axis of the ridge waveguide and parallel to the top side of the semiconductor layer sequence, a current flow layer in direct contact with the contact metalization, wherein the top side of the semiconductor layer sequence comprises a section adjoining one of the two breaking linesover the width of said section relative to a longitudinal axis of the ridge waveguide, the section comprises at least one subsection of the top side of the ridge waveguide, the subsection extends in a manner adjoining said one of the two breaking lines over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer.