# US 2018/0323403 A1 · Light-emitting device and electronic apparatus

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- Number: US 2018/0323403 A1
- Document ID: US20180323403A1
- Status: Published application
- Kind: A1
- Application number: 16/031,421
- Filed: 2018-07-10
- Published: 2018-11-08
- Earliest claimed: 2013-07-01
- Assignees: Seiko Epson Corporation
- Applicants: Seiko Epson Corporation
- Inventors: Ryoichi NOZAWA; Atsushi AMANO; Takeshi KOSHIHARA; Akio FUKASE; Shinichi IWATA
- Web page: https://patentgrep.com/patent/US20180323403A1

## CPC

- H10K 59/35: comprising red-green-blue [RGB] subpixels
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/876: {comprising a resonant cavity structure, e.g. Bragg reflector pair}
- H10K 59/873: {Encapsulations}
- H10K 2102/00: Constructional details relating to the organic devices covered by this subclass
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.

## Claims

### Claim 1

A light-emitting device, the light-emitting device comprising:
a reflective layer;
a semi-transmissive reflective layer;
a light-emission functional layer disposed between the reflective layer and the semi-transmissive reflective layer;
a first pixel electrode disposed between the reflective layer and the light-emission functional layer;
a second pixel electrode disposed between the reflective layer and the light-emission functional layer;
a third pixel electrode disposed between the reflective layer and the light-emission functional layer;
an optical path adjustment layer having a first adjustment layer formed of silicon nitride, a second adjustment layer formed of silicon oxide, and a third adjustment layer formed of silicon oxide;
a pixel definition layer with a top surface and a bottom surface opposite the top surface that is formed of an insulating material including silicon compound, the pixel definition layer has a first aperture part corresponding the first pixel electrode, a second aperture part corresponding the second pixel electrode, and a third aperture part corresponding the third pixel electrode,
wherein the first adjustment layer is disposed between the first pixel electrode and the reflective layer,
wherein the first adjustment layer and the second adjustment layer are disposed between the second pixel electrode and the reflective layer,
wherein the first adjustment layer, the second adjustment layer, and the third adjustment layer are disposed between the third pixel electrode and the reflective layer,
wherein the pixel definition layer physically contacts the optical path adjustment layer, the light-emission functional layer, the first pixel electrode, the second pixel electrode, and the third pixel electrode, and
wherein a film thickness of the pixel definition layer between the top surface and the bottom surface along a vertical line and between the physical contact with the optical path adjustment layer and the physical contact with the light-emission functional layer is less than a film thickness of the second adjustment layer and a film thickness of the third adjustment layer.

### Claim 2 (depends on 1)

The light-emitting device according to claim 1, further comprising a sealing layer covering the semi-transmissive reflective layer,
wherein a film thickness of the sealing layer is greater than the film thickness of the second adjustment layer and the film thickness of the third adjustment layer.

### Claim 3 (depends on 2)

The light-emitting device according to claim 2,
wherein the semi-transmissive reflective layer is an electrode in direct contact with the light-emission functional layer.

### Claim 4 (depends on 1)

The light-emitting device according to claim 1, further comprising:
a first transistor;
a second transistor;
a third transistor;
a first contact electrode electrically connected between the first transistor and the first pixel electrode;
a second contact electrode electrically connected between the second transistor and the second pixel electrode; and
a third contact electrode electrically connected between the third transistor and the third pixel electrode.

### Claim 5 (depends on 4)

The light-emitting device according to claim 4, wherein at least part of the first contact electrode is disposed between the first adjustment layer and the first pixel electrode,
wherein at least part of the second contact electrode is disposed between the first adjustment layer and the second adjustment layer, and
wherein at least part of the third contact electrode is disposed between the first adjustment layer and the second adjustment layer.

### Claim 6 (depends on 5)

The light-emitting device according to claim 5,
wherein the first contact electrode physically contacts the first pixel electrode,
wherein the second contact electrode physically contacts the second pixel electrode, and
wherein the third contact electrode physically contacts the third pixel electrode.

### Claim 7 (depends on 1)

The light-emitting device according to claim 1,
wherein the light-emission functional layer includes a light-emitting layer that is made from an organic EL material.

### Claim 8 (depends on 1)

An electronic apparatus comprising the light-emitting device according to claim 1.

### Claim 9 (depends on 2)

An electronic apparatus comprising the light-emitting device according to claim 2.

### Claim 10 (depends on 3)

An electronic apparatus comprising the light-emitting device according to claim 3.

### Claim 11 (depends on 4)

An electronic apparatus comprising the light-emitting device according to claim 4.

### Claim 12 (depends on 5)

An electronic apparatus comprising the light-emitting device according to claim 5.

### Claim 13 (depends on 6)

An electronic apparatus comprising the light-emitting device according to claim 6.

### Claim 14 (depends on 7)

An electronic apparatus comprising the light-emitting device according to claim 7.

### Claim 15 (depends on 1)

A head-mounted display apparatus comprising the light-emitting device according to claim 1.

### Claim 16 (depends on 2)

A head-mounted display apparatus comprising the light-emitting device according to claim 2.

### Claim 17 (depends on 3)

A head-mounted display apparatus comprising the light-emitting device according to claim 3.

### Claim 18 (depends on 4)

A head-mounted display apparatus comprising the light-emitting device according to claim 4.

### Claim 19 (depends on 5)

A head-mounted display apparatus comprising the light-emitting device according to claim 5.

### Claim 20 (depends on 6)

A head-mounted display apparatus comprising the light-emitting device according to claim 6.
