# US 2018/0323390 A1 · Photoelectric conversion element, method of manufacturing the same, solid state image sensor, electronic device, and solar cell

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- Number: US 2018/0323390 A1
- Document ID: US20180323390A1
- Status: Published application
- Kind: A1
- Application number: 15/773,675
- Filed: 2016-11-10
- Published: 2018-11-08
- Earliest claimed: 2015-11-24
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: YUKIO KANEDA
- Web page: https://patentgrep.com/patent/US20180323390A1

## CPC

- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/12: Image sensors
- H10F 39/182: {Colour image sensors}
- H10F 39/192: {Colour image sensors}
- H10F 39/8033: {Photosensitive area}
- H10K 30/353: {comprising blocking layers, e.g. exciton blocking layers}
- H10K 30/82: Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K 39/32: Organic image sensors
- H10F 39/191: {Photoconductor image sensors}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.

## Claims

### Claim 1

A photoelectric conversion element comprising:
two electrodes constituting an anode and a cathode; and
a photoelectric conversion layer arranged between the two electrodes, wherein
at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer.

### Claim 2 (depends on 1)

The photoelectric conversion element according to claim 1, wherein
an electrode side serving as the cathode is doped with the impurity exhibiting an electron accepting property.

### Claim 3 (depends on 1)

The photoelectric conversion element according to claim 1, wherein
an electrode side serving as the anode is doped with the impurity exhibiting an electron donating property.

### Claim 4 (depends on 1)

The photoelectric conversion element according to claim 1, wherein
an electrode side serving as the cathode is doped with the impurity exhibiting an electron accepting property, and an electrode side serving as the anode is doped with the impurity exhibiting an electron donating property.

### Claim 5 (depends on 1)

The photoelectric conversion element according to claim 1, further comprising:
a hole blocking layer between the electrode serving as the anode and the photoelectric conversion layer.

### Claim 6 (depends on 1)

The photoelectric conversion element according to claim 1, further comprising:
an electron blocking layer between the electrode serving as the cathode and the photoelectric conversion layer.

### Claim 7 (depends on 1)

The photoelectric conversion element according to claim 1, wherein
the impurity density is 1e17/cm3 or more.

### Claim 8 (depends on 7)

The photoelectric conversion element according to claim 7, wherein
the impurity density is 1e18/cm3 or more.

### Claim 9

A method of manufacturing a photoelectric conversion element, the method comprising:
forming two electrodes constituting an anode and a cathode, and
a photoelectric conversion layer arranged between the two electrodes; and
doping at least one electrode side of the two electrodes with an impurity at impurity density of 1e16/cm3 or more in forming the photoelectric conversion layer.

### Claim 10

A solid state image sensor comprising:
a photoelectric conversion element including
two electrodes constituting an anode and a cathode, and
a photoelectric conversion layer arranged between the two electrodes, and
at least one electrode side of the two electrodes being doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer.

### Claim 11

An electronic device comprising:
a photoelectric conversion element including
two electrodes constituting an anode and a cathode, and
a photoelectric conversion layer arranged between the two electrodes, and
at least one electrode side of the two electrodes being doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer.

### Claim 12

A solar cell comprising:
a photoelectric conversion element including
two electrodes constituting an anode and a cathode, and
a photoelectric conversion layer arranged between the two electrodes, and
at least one electrode side of the two electrodes being doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer.