# US 2018/0323369 A1 · Inductors with through-substrate via cores > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323369 A1 - Document ID: US20180323369A1 - Status: Published application - Kind: A1 - Application number: 15/584,294 - Filed: 2017-05-02 - Published: 2018-11-08 - Earliest claimed: 2017-05-02 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Kyle K. Kirby - Web page: https://patentgrep.com/patent/US20180323369A1 ## CPC - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H01F 17/0033: {with the coil helically wound around a magnetic core} - H10D 1/00: Resistors, capacitors or inductors - H10W 20/0245: {comprising use of blind vias during the manufacture} - H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers} - H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers} - H01F 2017/002: {Details of via holes for interconnecting the layers} - H01F 2017/0086: {on semiconductor substrate} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device comprising a substrate is provided. The device further comprises a through-substrate via (TSV) extending into the substrate, and a substantially helical conductor disposed around the TSV. The substantially helical conductor can be configured to generate a magnetic field in the TSV in response to a current passing through the helical conductor. More than one TSV can be included, and/or more than one substantially helical conductor can be provided. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate, a through-substrate via (TSV) extending into the substrate, and a substantially helical conductor disposed around the TSV. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the substantially helical conductor is configured to generate a magnetic field in the TSV in response to a current passing through the substantially helical conductor. ### Claim 3 (depends on 2) The semiconductor device of claim 2, wherein the substantially helical conductor is configured to induce a change in the magnetic field in the TSV in response to a changing current in the substantially helical conductor. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the TSV comprises a ferromagnetic or a ferrimagnetic material. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the TSV is separated from the substantially helical conductor by an insulating material. ### Claim 6 (depends on 1) The semiconductor device of claim 1, wherein the substantially helical conductor comprises more than one turn around the TSV. ### Claim 7 (depends on 1) The semiconductor device of claim 1, wherein the substantially helical conductor is coaxially aligned with the TSV. ### Claim 8 A semiconductor device, comprising: a substrate, a through-substrate via (TSV) extending into the substrate, a first substantially helical conductor disposed around the TSV, and a second substantially helical conductor disposed around the TSV. ### Claim 9 (depends on 8) The semiconductor device of claim 8, wherein the first substantially helical conductor is configured to induce a change in a magnetic field in the TSV in response to a first changing current in the first substantially helical conductor, and wherein the second substantially helical conductor is configured to have a second changing current induced therein in response to the change in the magnetic field. ### Claim 10 (depends on 9) The semiconductor device of claim 9, further comprising: a third substantially helical conductor disposed around the TSV, wherein the third substantially helical conductor is configured to have a third changing current induced therein in response to the change in the magnetic field. ### Claim 11 (depends on 8) The semiconductor device of claim 8, wherein the TSV comprises a ferromagnetic or a ferrimagnetic material. ### Claim 12 (depends on 8) The semiconductor device of claim 8, wherein the TSV is separated from the first and second substantially helical conductors by an insulating material. ### Claim 13 (depends on 8) The semiconductor device of claim 8, wherein the first substantially helical conductor comprises a different number of turns around the TSV than the second substantially helical conductor. ### Claim 14 (depends on 8) The semiconductor device of claim 8, wherein the first and second substantially helical conductors comprise a same number of turns around the TSV. ### Claim 15 (depends on 8) The semiconductor device of claim 8, wherein one of the first and second substantially helical conductors comprises more than one turn around the TSV. ### Claim 16 (depends on 8) The semiconductor device of claim 8, wherein the first and second substantially helical conductors are coaxially aligned with the TSV. ### Claim 17 (depends on 8) The semiconductor device of claim 8, wherein the first substantially helical conductor and the second substantially helical conductor are electrically isolated from each other and from the TSV. ### Claim 18 (depends on 8) The semiconductor device of claim 8, wherein the first substantially helical conductor is electrically connected to a power supply and the second substantially helical conductor is electrically connected to a load. ### Claim 19 A semiconductor device, comprising: a substrate, a first through-substrate via (TSV) extending into the substrate, a second TSV extending into the substrate, a first substantially helical conductor disposed around the first TSV, and a second substantially helical conductor disposed around the second TSV. ### Claim 20 (depends on 19) The semiconductor device of claim 19, wherein the first substantially helical conductor is configured to induce a change in a magnetic field in the first TSV and the second TSV in response to a first changing current in the first substantially helical conductor, and wherein the second substantially helical conductor is configured to have a second changing current induced therein in response to the change in the magnetic field in the second TSV. ### Claim 21 (depends on 20) The semiconductor device of claim 20 wherein the first TSV is coupled to the second TSV by an upper coupling member above the first and second substantially helical conductors, and by a lower coupling member below the first and second substantially helical conductors, such that the first and second TSVs and the upper and lower coupling members form a closed path for the magnetic field. ### Claim 22 (depends on 19) The semiconductor device of claim 19, wherein each of the first and second TSVs comprise a ferromagnetic or a ferrimagnetic material. ### Claim 23 (depends on 19) The semiconductor device of claim 19, wherein the first TSV is electrically insulated from the first substantially helical conductor, and the second TSV is electrically insulated from the second substantially helical conductor. ### Claim 24 (depends on 19) The semiconductor device of claim 19, wherein the first substantially helical conductor and the second substantially helical conductor are electrically isolated from each other and from the first and second TSVs. ### Claim 25 (depends on 19) The semiconductor device of claim 19, wherein the first substantially helical conductor comprises a different number of turns around the first TSV than the second substantially helical conductor comprises around the second TSV. ### Claim 26 (depends on 19) The semiconductor device of claim 19, wherein the first substantially helical conductor comprises a same number of turns around the first TSV as the second substantially helical conductor comprises around the second TSV. ### Claim 27 (depends on 19) The semiconductor device of claim 19, wherein the first substantially helical conductor comprises more than one turn around the first TSV. ### Claim 28 (depends on 19) The semiconductor device of claim 19, wherein the second substantially helical conductor comprises more than one turn around the second TSV. ### Claim 29 (depends on 19) The semiconductor device of claim 19, wherein the first substantially helical conductor is coaxially aligned with the first TSV, and the second substantially helical conductor is coaxially aligned with the second TSV. ### Claim 30 (depends on 19) The semiconductor device of claim 19, wherein the first substantially helical conductor is electrically connected to a power supply and the second substantially helical conductor is electrically connected to a load. ### Claim 31 A semiconductor device, comprising: a substrate, a through-substrate via (TSV) extending into the substrate, and a non-planar spiral conductor disposed around the TSV. ### Claim 32 (depends on 31) The semiconductor device of claim 31, wherein the non-planar spiral conductor is configured to generate a magnetic field in the TSV in response to a current passing through the non-planar spiral conductor. ### Claim 33 (depends on 32) The semiconductor device of claim 32, wherein the non-planar spiral conductor is configured to induce a change in the magnetic field in the TSV in response to a changing current in the non-planar spiral conductor. ### Claim 34 (depends on 31) The semiconductor device of claim 31, wherein the TSV comprises a ferromagnetic or a ferrimagnetic material.