# US 2018/0323360 A1 · Zintl-phase thermoelectric conversion material

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2018/0323360 A1
- Document ID: US20180323360A1
- Status: Published application
- Kind: A1
- Application number: 15/838,106
- Filed: 2017-12-11
- Published: 2018-11-08
- Earliest claimed: 2017-05-08
- Assignees: Panasonic Intellectual Property Management Co., Ltd.
- Applicants: Panasonic Intellectual Property Management Co., Ltd.
- Inventors: TSUTOMU KANNO; HIROMASA TAMAKI; HIROKI SATO
- Web page: https://patentgrep.com/patent/US20180323360A1

## CPC

- H10N 10/852: comprising tellurium, selenium or sulfur
- C04B 35/547: based on sulfides or selenides {or tellurides}
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3241: Chromium oxides, chromates, or oxide-forming salts thereof
- C04B 2235/3251: Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
- C04B 2235/3262: Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3294: Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
- C04B 2235/3298: Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
- C04B 2235/3418: Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
- C04B 2235/666: Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
- C04B 2235/767: Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
- C04B 2235/786: Micrometer sized grains, i.e. from 1 to 100 micron
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE

## Abstract

The present invention provides a Zintl-phase thermoelectric conversion material represented by the chemical formula (I): Mg3+m-aAaB2-c-eCcEe (I) where A represents at least one selected from the group consisting of Ca, Sr, Ba, Nb, Zn, and Al; B represents at least one selected from the group consisting of Sb and Bi; C represents at least one selected from the group consisting of Mn, Si, and Cr; E represents at least one selected from the group consisting of Se and Te; m is not less than −0.1 and not more than 0.4; a is not less than 0 and not more than 0.1; c is not less than 0 and not more than 0.1; e is not less than 0.001 and not more than 0.06; and the Zintl-phase thermoelectric conversion material has a La2O3 crystal structure and an average grain size of not less than 3 micrometers and not more than 70 micrometers.

## Claims

### Claim 1

A thermoelectric conversion material represented by the following chemical formula (I):
Mg3+m-aAaB2-c-eCcEe (I)
where
the element A represents at least one selected from the group consisting of Ca, Sr, Ba, Nb, Zn, and Al;
the element B represents at least one selected from the group consisting of Sb and Bi;
the element C represents at least one selected from the group consisting of Mn, Si, and Cr;
the element E represents at least one selected from the group consisting of Se and Te;
the value of m is not less than −0.1 and not more than 0.4;
the value of a is not less than 0 and not more than 0.1;
the value of c is not less than 0 and not more than 0.1;
the value of e is not less than 0.001 and not more than 0.06;
the thermoelectric conversion material has a La2O3 crystal structure; and
the thermoelectric conversion material has an average grain size of not less than 3 micrometers and not more than 70 micrometers.

### Claim 2 (depends on 1)

The thermoelectric conversion material according to claim 1, wherein
the value of m is not less than −0.05 and not more than 0.3;
the value of a is 0;
the value of c is 0;
the value of e is not less than 0.005 and not more than 0.03; and
the thermoelectric conversion material has an average grain size of not less than 3 micrometers and not more than 30 micrometers.