# US 2018/0323344 A1 · Uv led package > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323344 A1 - Document ID: US20180323344A1 - Status: Published application - Kind: A1 - Application number: 16/034,341 - Filed: 2018-07-12 - Published: 2018-11-08 - Earliest claimed: 2016-09-01 - Assignees: Lumens Co., Ltd. - Applicants: Lumens Co., Ltd. - Inventors: MinPyo KIM; DaeWon KIM - Web page: https://patentgrep.com/patent/US20180323344A1 ## CPC - H10H 20/8506: {Containers} - F21K 9/237: Details of housings or cases, i.e. the parts between the light-generating element and the bases; Arrangement of components within housings or cases (F21K9/238 takes precedence) - G02B 6/102: {for infrared and ultraviolet radiation} - H05B 45/00: Circuit arrangements for operating light-emitting diodes [LED] - H10H 20/826: comprising only Group IV materials - H10H 20/83: Electrodes - H10H 20/831: characterised by their shape - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/85: Packages - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/8581: {characterised by their material} - H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes - H10W 20/484: {Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes} - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 70/68: Shapes or dispositions thereof - H10W 72/00: Interconnections or connectors in packages - H10W 90/00: Package configurations - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/856: Reflecting means - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A UV LED package disclosed herein includes a submount, a UV LED chip adapted to emit UV light at 200 nm to 400 nm, and a package body mounted with the submount. The submount includes a heat dissipating substrate, a first reflective electrode film and a second reflective electrode film separated from each other by an electrode separation gap on the heat dissipating substrate, a first flip-chip bonding pad and a first wire bonding pad disposed on the first reflective electrode film, and a second flip-chip bonding pad and a second wire bonding pad disposed on the second reflective electrode film. The UV LED chip includes a first conductive electrode pad corresponding to the first flip-chip bonding pad and a second conductive electrode pad corresponding to the second flip-chip bonding pad. The UV LED chip is flip-chip bonded to the submount through a first bonding bump interposed between the first flip-chip bonding pad and the first conductive electrode pad and a second bonding bump interposed between the second flip-chip bonding pad and the second conductive electrode pad. The package body includes a first metal body electrically connected to the first wire bonding pad through a first bonding wire and a second metal body separated from the first metal body by an insulating material and electrically connected to the second wire bonding pad through a second bonding wire. ## Claims ### Claim at position 1 1-19. (canceled) ### Claim 20 An ultra-violet (UV) light emitting diode (LED) package comprising: a submount comprising a first reflective electrode film and a second reflective electrode film separated from the first reflective electrode film by an electrode separation gap on a heat dissipating substrate, a first flip-chip bonding pad and a first wire bonding pad disposed on the first reflective electrode film, and a second flip-chip bonding pad and a second wire bonding pad disposed on the second reflective electrode film; a UV LED chip emits ultraviolet light in a wavelength range from 200 nm to 400 nm, the UV LED chip comprising a first conductive electrode pad corresponding to the first flip-chip bonding pad and a second conductive electrode pad corresponding to the second flip-chip bonding pad; and a package body comprising a first metal body and a second metal separated from the first metal body by an insulating material and the first metal body electrically connected to the first wire bonding pad through a first bonding wire and the second metal body electrically connected to the second wire bonding pad through a second bonding wire, wherein the UV LED chip positioned substantially a center of the submount and covered at least a part of the first reflective electrode film, the second reflective electrode film and the electrode separation gap. ### Claim 21 (depends on 20) The UV LED package according to claim 20, wherein the submount positioned substantially a center of the package body. ### Claim 22 (depends on 20) The UV LED package according to claim 20, wherein the insulating material is larger than the electrode separation gap. ### Claim 23 (depends on 20) The UV LED package according to claim 20, wherein the electrode separation gap is formed in an L-shape and the insulating material is formed a straight line. ### Claim 24 (depends on 20) The UV LED package according to claim 20, wherein the UV LED chip is formed the first metal body and the first metal body is further comprising a zener diode. ### Claim 25 (depends on 24) The UV LED package according to claim 24, wherein the zener diode is electrically connected to the second metal body by a third bonding wire. ### Claim 26 (depends on 20) The UV LED package according to claim 20, wherein the first bonding gap includes a recess by which is sufficiently spaced from an intersection of the electrode separation gap. ### Claim 27 An ultra-violet (UV) light emitting diode (LED) package comprising: a submount comprising a first reflective electrode film and a second reflective electrode film separated from the first reflective electrode film by an electrode separation gap on a heat dissipating substrate, a first flip-chip bonding pad and a first wire bonding pad disposed on the first reflective electrode film, and a second flip-chip bonding pad and a second wire bonding pad disposed on the second reflective electrode film; a UV LED chip emits ultraviolet light in a wavelength range from 200 nm to 400 nm, the UV LED chip comprising a first conductive electrode pad corresponding to the first flip-chip bonding pad and a second conductive electrode pad corresponding to the second flip-chip bonding pad; and a package body comprising a first metal body and a second metal separated from the first metal body by an insulating material and the first metal body electrically connected to the first wire bonding pad through a first bonding wire and the second metal body electrically connected to the second wire bonding pad through a second bonding wire, wherein the submount is formed a quadrangle with four corners and the second reflective electrode film is formed a quadrangular in one corner of the submount, the first reflective electrode film is formed an L-shape in three corners of the submount. ### Claim 28 (depends on 27) The UV LED package according to claim 27, wherein the insulating material is larger than the electrode separation gap. ### Claim 29 (depends on 27) The UV LED package according to claim 27, wherein the electrode separation gap is formed in an L-shape and the insulating material is formed a straight line. ### Claim 30 (depends on 27) The UV LED package according to claim 27, wherein the UV LED chip is formed the metal body and the first metal body is further comprising a zener diode. ### Claim 31 (depends on 27) The UV LED package according to claim 27, wherein the first bonding gap includes a recess by which is sufficiently spaced from an intersection of the electrode separation gap. ### Claim 32 An ultra-violet (UV) light emitting diode (LED) package comprising: a submount comprising a first reflective electrode film and a second reflective electrode film separated from the first reflective electrode film by an electrode separation gap, a first flip-chip bonding pad and a first wire bonding pad disposed on the first reflective electrode film, and a second flip-chip bonding pad and a second wire bonding pad disposed on the second reflective electrode film; a UV LED chip comprising a first conductive electrode pad corresponding to the first flip-chip bonding pad and a second conductive electrode pad corresponding to the second flip-chip bonding pad, and flip-chip bonded to the submount; and a package body mounted on the submount and comprising a first metal body electrically connected to the first wire bonding pad through a first bonding wire and a second metal body separated from the first metal body by an insulating material and electrically connected to the second wire bonding pad through a second bonding wire, wherein the submount is in the form of a quadrangle with four corners and the first wire bonding pad, the second wire bonding pad, the first flip-chip bonding pad and the second flip-chip bonding pad are arranged separately on one diagonal line connecting the diagonal corners of the submount. ### Claim 33 (depends on 32) The UV LED package according to claim 32, wherein the first wire bonding pad and the second wire bonding pad are disposed separately at the corners of the submount. ### Claim 34 (depends on 32) The UV LED package according to claim 32, wherein the second flip-chip bonding pad is disposed in the central area on the diagonal line. ### Claim 35 (depends on 32) The UV LED package according to claim 32, wherein further comprising zener mounted the first metal body and connected to the second metal body by a third bonding wire. ### Claim 36 (depends on 32) The UV LED package according to claim 32, wherein the insulating material is larger than the electrode separation gap. ### Claim 37 (depends on 32) The UV LED package according to claim 32, wherein the electrode separation gap is formed in an L-shape and the insulating material is formed a straight line. ### Claim 38 (depends on 32) The UV LED package according to claim 32, wherein the first bonding gap includes a recess by which is sufficiently spaced from an intersection of the electrode separation gap. ### Claim 39 (depends on 32) The UV LED package according to claim 32, wherein the first flip chip bonding pad comprises a main bonding pattern and a pair of peripheral bonding patterns arranged away from the main bonding pattern, and the main bonding pattern is connected to the pair of peripheral bonding patterns through a pair of linear connection bonding patterns crossing each other around the main bonding pattern.