# US 2018/0323339 A1 · Light emitting diode including wavelength conversion layers

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- Number: US 2018/0323339 A1
- Document ID: US20180323339A1
- Status: Published application
- Kind: A1
- Application number: 15/962,584
- Filed: 2018-04-25
- Published: 2018-11-08
- Earliest claimed: 2017-05-02
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives; Thales
- Applicants: Commissariat A L'energie Atomique Et Aux Energies Alternatives; Thales
- Inventors: Ivan-Christophe ROBIN
- Web page: https://patentgrep.com/patent/US20180323339A1

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A light emitting diode including: a structure for emitting light at a first wavelength λ1, comprising a p-n junction in which is arranged an active zone including a first emissive layer comprising InX1Ga1-X1N arranged between two first barriers; a conversion structure configured for converting the light emitted by the emission structure into a second wavelength different to the first, arranged on the emission structure and including a second InX2Ga1-X2N emissive layer, arranged between two second barriers each including several InX3Ga1-X3N absorption layers separated from each other by a GaN interlayer; in which the indium concentrations X1, X2 and X3 are such that 0<X1<X2 and Eg(InX2Ga1-X2N)<Eg(InX3Ga1-X3N)≤h·c/λ1.

## Claims

### Claim 1

A light emitting diode including at least:
a structure for emitting light at at least one first wavelength λ1, comprising a p-n junction in which is arranged an active zone including at least one first quantum well formed by a first emissive layer comprising InX1Ga1-X1N arranged between two first barriers;
a conversion structure configured for converting the light intended to be emitted by the emission structure into at least one second wavelength λ2 different to the first wavelength λ1, arranged on the emission structure and including at least one second quantum well formed by a second InX2Ga1-X2N emissive layer, arranged between two second barriers each including several first InX3Ga1-X3N absorption layers separated from each other by at least one first GaN interlayer;
in which the indium concentrations X1, X2 and X3 are such that 0<X1<X2 and Eg(InX2Ga1-X2N)<Eg(InX3Ga1-X3N)≤h·c/λ1,
with:
Eg corresponding to the gap, or to the forbidden energy gap;
h corresponding to the Planck's constant equal to around 6.63·10−34 J·s;
c corresponding to the speed of light, equal to around 299,792,458 m/s.

### Claim 2 (depends on 1)

The light emitting diode according to claim 1, in which the total thickness of the conversion structure is greater than or equal to 40 nm, or greater than or equal to 60 nm.

### Claim 3 (depends on 1)

The light emitting diode according to claim 1, in which the indium concentrations X1 and X3 are such that X1<X3.

### Claim 4 (depends on 1)

The light emitting diode according to claim 1, in which the conversion structure comprises a number of second quantum wells between 1 and 50.

### Claim 5 (depends on 1)

The light emitting diode according to claim 1, in which each of the first barriers comprises a GaN layer.

### Claim 6 (depends on 1)

The light emitting diode according to claim 1, in which the indium concentration X1 is between around 0.09 and 0.18, and/or in which the indium concentration X2 is such that X2≥0.22, and/or in which the indium concentration X3 is such that 0.08≤X3≤0.22.

### Claim 7 (depends on 1)

The light emitting diode according to claim 1, in which each first absorption layer which is not arranged against the second emissive layer has a thickness less than 9 nm, and/or in which the total thickness of the second emissive layer (118) and of two first absorption layers (122) arranged against the second emissive layer (118) is less than 9 nm.

### Claim 8 (depends on 1)

The light emitting diode according to claim 1, in which each first interlayer has a thickness between 1 and 4 atomic monolayers.

### Claim 9 (depends on 1)

The light emitting diode according to claim 1, in which each of the second barriers comprises two first absorption layers and a first interlayer.

### Claim 10 (depends on 1)

The light emitting diode according to claim 1, in which the conversion structure comprises at least one third quantum well formed by a third InX4Ga1-X4N emissive layer, arranged between two third barriers each including several second InX5Ga1-X5N absorption layers separated from each other by at least one second GaN interlayer, in which the indium concentrations X4 and X5 are such that X1<X4 and Eg(InX4Ga1-X4N)<Eg(InX5Ga1-X5N)≤h·c/λ1, with X2 of value different to that of X4.

### Claim 11 (depends on 10)

The light emitting diode according to claim 10, in which the indium concentration X2 is between 0.22 and 0.25, and in which the indium concentration X4 is between 0.3 and 0.4.

### Claim 12

A method for producing at least one light emitting diode, including at least:
production of a structure for emitting light at at least one first wavelength λ1, comprising a p-n junction in which is arranged an active zone including at least one first quantum well formed by a first emissive layer comprising InX1Ga1-X1N arranged between two first barriers;
production of a conversion structure configured for converting the light intended to be emitted by the emission structure into at least one second wavelength λ2 different to the first wavelength λ1, arranged on the emission structure and including at least one second quantum well formed by a second InX2Ga1-X2N emissive layer, arranged between two second barriers each including several first InX3Ga1-X3N absorption layers separated from each other by at least one first GaN interlayer;
in which the indium concentrations X1, X2 and X3 are such that 0<X1<X2 and Eg(InX2Ga1-X2N)<Eg(InX3Ga1-X3N)≤h·c/λ1,
with:
Eg corresponding to the gap, or to the forbidden energy gap;
h corresponding to the Planck's constant equal to around 6.63·10−34 J·s;
c corresponding to the speed of light, equal to around 299,792,458 m/s.

### Claim 13 (depends on 12)

The method according to claim 12, in which the layers of the emission structure and the conversion structure are produced by epitaxy.