# US 2018/0323337 A1 · Al-ga-n template, method for preparing al-ga-n template, and semiconductor device comprising al-ga-n template

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2018/0323337 A1
- Document ID: US20180323337A1
- Status: Published application
- Kind: A1
- Application number: 16/022,750
- Filed: 2018-06-29
- Published: 2018-11-08
- Earliest claimed: 2015-12-31
- Assignees: Hc Semitek (Suzhou) Co., Ltd.
- Applicants: Hc Semitek (Suzhou) Co., Ltd.
- Inventors: Binzhong DONG; Wubin ZHANG; Haiping AI; Peng LI; Jiangbo WANG
- Web page: https://patentgrep.com/patent/US20180323337A1

## CPC

- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An AlGaN template including a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, where 0<x<1. A method for preparing the AlGaN template includes providing a substrate; and depositing an Al1-xGaxN crystallization thin film on the substrate.

## Claims

### Claim 1

An AlGaN template, comprising a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, where 0<x<1.

### Claim 2 (depends on 1)

The template of claim 1, wherein the Al1-xGaxN crystallization thin film has a thickness of from 1 nm to 1000 nm.

### Claim 3 (depends on 1)

The template of claim 1, wherein the Al1-xGaxN crystallization thin film comprises a first AlGaN layer deposited on the substrate, and the first AlGaN layer is doped with O.

### Claim 4 (depends on 3)

The template of claim 3, wherein a content of oxygen in the first AlGaN layer gradually decreases or gradually increases from an interface between the substrate and the first AlGaN layer to a surface of the first AlGaN layer.

### Claim 5 (depends on 3)

The template of claim 3, wherein the Al1-xGaxN crystallization thin film further comprises a second AlGaN layer deposited on the first AlGaN layer, the second AlGaN layer is doped with oxygen and the oxygen doped in the second AlGaN layer is uniformly distributed in the second AlGaN layer, and a thickness of the second AlGaN layer is greater than 1 nm.

### Claim 6 (depends on 1)

The template of claim 1, wherein the substrate is a Si, SiC, sapphire, ZnO, GaAs, GaP, MgO, Cu, W, or SiO2 substrate.

### Claim 7 (depends on 1)

A semiconductor device comprising an AlGaN template of claim 1 and a nitride semiconductor layer deposited on the Al1-xGaxN crystallization thin film of the AlGaN template.

### Claim 8

A method for preparing an AlGaN template, the method comprising:
providing a substrate; and
depositing an Al1-xGaxN crystallization thin film on the substrate, where 0<x<1.

### Claim 9 (depends on 8)

The method of claim 8, wherein: depositing an Al1-xGaxN crystallization thin film on the substrate comprises:
arranging the substrate in a vacuum environment and baking the substrate, wherein a baking time is 1-15 minutes, a baking temperature is 300-900 degrees Celsius, and a baking pressure is less than 10−7 Torr; and
sputtering an aluminum-germanium alloy target in a gas atmosphere in which at least Ar and N2 are mixed to deposit an Al1-xGaxN crystallization thin film on the substrate, wherein a deposition temperature is 400-800 degrees Celsius, a deposition pressure is 1-10 mTorr, a sputtering power is 1 kW-10 kW, and a sputtering time is 10 seconds-1000 seconds.

### Claim 10 (depends on 8)

The method of claim 8, wherein: depositing an Al1-xGaxN crystallization thin film on the substrate comprises:
disposing the substrate into a nitrogen atmosphere or a nitrogen ion beam stream; and
vaporizing an Al source and a Ga source by an electron beam in the nitrogen atmosphere or the nitrogen ion beam to deposit the Al1-xGaxN crystallization thin film on the substrate, wherein a deposition pressure is 2×10−5-7×10−5 Torr, a deposition temperature is 100-400 degrees Celsius, and a deposition time is 10 seconds-1000 seconds.