# US 2018/0323335 A1 · Electrically driven light-emitting tunnel junctions

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- Number: US 2018/0323335 A1
- Document ID: US20180323335A1
- Status: Published application
- Kind: A1
- Application number: 15/781,652
- Filed: 2016-12-07
- Published: 2018-11-08
- Earliest claimed: 2015-12-07
- Assignees: Massachusetts Institute of Technology
- Applicants: Massachusetts Institute of Technology
- Inventors: Farnaz Niroui; Thomas Stephen Mahony; Vladimir Bulovic; Jeffrey H. Lang
- Web page: https://patentgrep.com/patent/US20180323335A1

## CPC

- H10H 20/052: {Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/83: Electrodes
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Light-emitting devices are disclosed. In some embodiments, the devices may emit light when a tunneling current is generated within the device.

## Claims

### Claim 1

A device, comprising:
a first electrode;
a second electrode; and
an insulator layer positioned between the first electrode and the second electrode, wherein the insulator layer is configured such that tunneling occurs between the first electrode and the second electrode when a voltage difference is established between the first electrode and the second electrode, and wherein the insulator layer is configured such that light emission occurs when tunneling occurs.

### Claim 2

(canceled)

### Claim 3 (depends on 1)

A device as in claim 1, wherein the device does not emit light in the absence of a tunneling current.

### Claim 4 (depends on 1)

A device as in claim 1, wherein light emission can be reversibly switched on and off at a rate of greater than or equal to 100 GHz.

### Claim 5 (depends on 1)

A device as in claim 1, wherein the light is visible light.

### Claim 6 (depends on 1)

A device as in claim 1, wherein the light is infrared light.

### Claim 7 (depends on 1)

A device as in claim 1, wherein the insulator layer is a deformable layer.

### Claim 8 (depends on 1)

A device as in claim 1, wherein the insulator layer is not a deformable layer.

### Claim 9

A method of operating a device, comprising:
applying a voltage such that a tunneling current is generated between a first electrode and a second electrode, wherein the generation of a tunneling current causes light to be emitted.

### Claim 10 (depends on 9)

A method as in claim 9, wherein the device does not emit light in the absence of a tunneling current.

### Claim 11 (depends on 9)

A method as in claim 9, wherein light emission can be reversibly switched on and off at a rate of greater than or equal to 100 GHz.

### Claim 12 (depends on 9)

A method as in claim 9, wherein the light is visible light.

### Claim 13 (depends on 9)

A method as in claim 9, wherein the light is infrared light.

### Claim 14 (depends on 9)

A method as in claim 9, wherein the insulator layer is a deformable layer.

### Claim 15 (depends on 9)

A method as in claim 9, wherein the insulator layer is not a deformable layer.