# US 2018/0323328 A1 · Solar cell and method for manufacturing the same

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- Number: US 2018/0323328 A1
- Document ID: US20180323328A1
- Status: Published application
- Kind: A1
- Application number: 16/033,459
- Filed: 2018-07-12
- Published: 2018-11-08
- Earliest claimed: 2009-02-13
- Assignees: LG Electronics Inc.
- Applicants: LG Electronics Inc.
- Inventors: Sunyoung KIM; Choul KIM; Youngho CHOE; Sungeun LEE
- Web page: https://patentgrep.com/patent/US20180323328A1

## CPC

- H10F 10/146: {Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side}
- H10F 77/147: {Shapes of bodies}
- H10F 77/148: {Shapes of potential barriers}
- H10F 77/219: {Arrangements for electrodes of back-contact photovoltaic cells}
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 77/311: {for photovoltaic cells}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- Y02E 10/52: PV systems with concentrators
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A solar cell including a semiconductor layer containing first type impurities and having front and back surfaces, a first portion on the back surface of the semiconductor layer, the first portion being doped with second type impurities, a second portion on the back surface of the semiconductor layer, the second portion being more heavily doped with the first type impurities than the semiconductor layer, a third portion on the back surface of the semiconductor layer, the third portion being doped with the first type impurities more heavily than the semiconductor layer and less heavily than the second portion, a passivation layer on the back surface of the semiconductor layer and contacting the first portion, the second portion and the third portion, and having contact holes corresponding to the first portion and the second portion and an anti-reflection layer formed on the front surface of the semiconductor layer.

## Claims

### Claim 1

A solar cell comprising:
a semiconductor layer containing first type impurities and having a front surface and a back surface, the front surface being a light incident surface on which light is incident;
a first portion on the back surface of the semiconductor layer, the first portion being doped with second type impurities opposite to the first type impurities, and forming a p-n junction with the semiconductor layer;
a second portion on the back surface of the semiconductor layer, the second portion being more heavily doped with the first type impurities than the semiconductor layer;
a third portion on the back surface of the semiconductor layer, the third portion being doped with the first type impurities more heavily than the semiconductor layer and less heavily than the second portion;
a first electrode on the back surface of the semiconductor layer and connected to the first portion;
a second electrode on the back surface of the semiconductor layer and connected to the second portion;
a passivation layer on the back surface of the semiconductor layer and contacting the first portion, the second portion and the third portion, and having contact holes corresponding to the first portion and the second portion; and
an anti-reflection layer formed on the front surface of the semiconductor layer, and including a silicon nitride layer and a silicon dioxide layer.