# US 2018/0323318 A1 · Multi-wavelength detector array incorporating two dimensional and one dimensional materials > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323318 A1 - Document ID: US20180323318A1 - Status: Published application - Kind: A1 - Application number: 16/030,035 - Filed: 2018-07-09 - Published: 2018-11-08 - Earliest claimed: 2016-04-25 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Michael Engel; Mathias B. Steiner - Web page: https://patentgrep.com/patent/US20180323318A1 ## CPC - H10F 77/40: Optical elements or arrangements (surface textures H10F77/70) - H10F 30/222: the potential barrier being a PN heterojunction - H10F 30/288: {the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices} - H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) - H10F 77/162: Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials (H10F77/169 takes precedence) - H10F 77/1625: {Semiconductor nanoparticles embedded in semiconductor matrix} - H10F 77/331: {for filtering or shielding light, e.g. multicolour filters for photodetectors} - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer. ## Claims ### Claim 1 A method of forming a wavelength detector comprising: forming a first transparent material layer having a uniform thickness on a first mirror structure; forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer, wherein the plurality of nanomaterial sections are composed of nanomaterials selected from the group consisting of graphene, transition metal dichalcogenides, carbon fullerenes, carbon nanotubes, black phosphorus or a combination thereof; forming a second transparent material layer having a plurality of different thickness portions atop the active element layer; and forming a second mirror structure on the second transparent material layer. ### Claim 2 (depends on 1) The method of claim 1, wherein forming the plurality of nanomaterial sections comprises: forming a layer of nanomaterials using chemical vapor deposition (CVD); and patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process. ### Claim 3 (depends on 1) The method of claim 1, wherein forming the plurality of nanomaterial sections comprises: forming a layer of nanomaterials using van der Walls epitaxial growth; and patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process. ### Claim 4 (depends on 2) The method of claim 2, wherein the electrodes are present between adjacent portions of nanomaterial sections in the plurality of nanomaterial sections. ### Claim 5 (depends on 1) The method of claim 1, wherein forming said plurality of different thickness portions comprises: depositing the second transparent material layer having a uniform thickness; forming a material layer for a photoresist mask having a uniform thickness; patterning the material layer with different levels of radiation; developing the material layer treated with different levels of radiation to provide a stepped etch mask; and etching the second transparent material layer using the stepped etch mask. ### Claim 6 (depends on 1) The method of claim 1, wherein said etching comprises an anisotropic etch. ### Claim 7 (depends on 1) The method of claim 1, wherein each successive step of reducing thickness provides a dimension from the first mirror structure to the second mirror structure with one of the plurality of nanomaterial sections present therebetween that provides a wavelength to be measured by change in resistance measured across electrodes from said alternating sequence of electrodes that are positioned on opposing sides of said one of said plurality of nanomaterial sections. ### Claim 8 A method of forming a wavelength detector comprising: forming a first transparent material layer having a uniform thickness on a first mirror structure; forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer, wherein the plurality of nanomaterial sections are composed of nanomaterials selected from the group consisting of graphene, transition metal dichalcogenides, carbon fullerenes, carbon nanotubes, black phosphorus or a combination thereof; and forming a second transparent material layer having a plurality of different thickness portions atop the active element layer. ### Claim 9 (depends on 8) The method of claim 8, wherein forming the plurality of nanomaterial sections comprises: forming a layer of nanomaterials using chemical vapor deposition (CVD); and patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process. ### Claim 10 (depends on 8) The method of claim 8, wherein forming the plurality of nanomaterial sections comprises: forming a layer of nanomaterials using van der Walls epitaxial growth; and patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process. ### Claim 11 A method of forming a wavelength detector comprising: forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop a first transparent material layer; forming a second transparent material layer having a plurality of different thickness portions atop the active element layer, wherein the plurality of different thickness portions include a plurality of reducing thicknesses with successive steps, each step of reducing thickness overlying one of the plurality of nanomaterials; and forming a mirror structure on the second transparent material layer. ### Claim 12 (depends on 11) The method of claim 11, wherein plurality of nanomaterial sections are composed of nanomaterials selected from the group consisting of graphene, transition metal dichalcogenides, carbon fullerenes, carbon nanotubes, black phosphorus or a combination thereof. ### Claim 13 (depends on 12) The method of claim 12, wherein forming the plurality of nanomaterial sections comprises forming a layer of nanomaterials using chemical vapor deposition (CVD). ### Claim 14 (depends on 13) The method of claim 13, wherein said forming the plurality of nanomaterial sections comprises van der Walls epitaxial growth. ### Claim 15 (depends on 13) The method of claim 13 further comprising patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process. ### Claim 16 (depends on 12) The method of claim 12, wherein the second transparent material layer is composed of a light transmissive material selected from the group consisting of aluminum oxide (Al2O3), silicon oxide (SiO2), silicon (Si), silicon nitride (Si3N4) and combinations thereof. ### Claim 17 (depends on 16) The method of claim 16, wherein forming said plurality of different thickness portions comprises: depositing the second transparent material layer having a uniform thickness; forming a material layer for a photoresist mask having a uniform thickness; patterning the material layer with different levels of radiation; developing the material layer treated with different levels of radiation to provide a stepped etch mask; and etching the second transparent material layer using the stepped etch mask. ### Claim 18 (depends on 17) The method of claim 17, wherein said etching comprises an anisotropic etch. ### Claim 19 (depends on 18) The method of claim 18, wherein each successive step of reducing thickness provides a nanomaterial section present therebetween that provides a wavelength to be measured by change in resistance measured across electrodes from said alternating sequence of electrodes that are positioned on opposing sides of said one of said plurality of nanomaterial sections. ### Claim 20 (depends on 17) The method of claim 17, wherein the first transparent material layer has a uniform thickness.