# US 2018/0323307 A1 · Imaging element, electronic appliance, method for driving imaging device, and method for driving electronic appliance > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323307 A1 - Document ID: US20180323307A1 - Status: Published application - Kind: A1 - Application number: 16/038,529 - Filed: 2018-07-18 - Published: 2018-11-08 - Earliest claimed: 2014-05-29 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Takayuki Ikeda - Web page: https://patentgrep.com/patent/US20180323307A1 ## CPC - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H04N 25/671: for non-uniformity detection or correction - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10F 39/026: {Wafer-level processing} - H10F 39/12: Image sensors - H10F 39/15: Charge-coupled device [CCD] image sensors - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/8053: {Colour filters} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An imaging element which is capable of obtaining a piece of image data by performing light exposure plural times is provided. In addition, an imaging element which is capable of obtaining image data with little noise is provided. Furthermore, an imaging device with reduced power consumption is provided. In an imaging element including a pixel, the pixel includes a photodiode, a transistor including an oxide semiconductor layer, a diode, and a charge retention portion. The polarity of an electrode of the photodiode which is connected to the transistor is the same as that of an electrode of the diode which is connected to the transistor. ## Claims ### Claim 1 1. An imaging device comprising: a first shooting mode configured to electrically connect a photodiode and an amplifier through a first transistor, a switch and a first wiring; and a second shooting mode configured to electrically connect the photodiode and the amplifier through the first transistor, the switch and a second transistor, wherein the switch is configured to switch the electrical connection through the first wiring and the electrical connection through the second transistor, wherein the first transistor comprises an oxide semiconductor, and wherein a gate of the second transistor is electrically connected to one of a source and a drain of the second transistor. ### Claim 2 (depends on 1) The imaging device according to claim 1, wherein the first shooting mode is a mode to produce an image during one period, and wherein the second shooting mode is one of a long exposure mode to produce an image during continuous periods and a multiple exposure mode to produce an image obtained by superimposition of a plurality of images during a plurality of periods. ### Claim 3 (depends on 1) The imaging device according to claim 1, further comprising a capacitor, wherein the capacitor is configured to accumulate charge generated by the photodiode. ### Claim 4 (depends on 1) The imaging device according to claim 1, wherein the first transistor is a transfer transistor. ### Claim 5 (depends on 1) The imaging device according to claim 1, wherein the first transistor and the photodiode overlap each other. ### Claim 6 (depends on 1) The imaging device according to claim 1, wherein the oxide semiconductor is an In—Ga—Zn oxide. ### Claim 7 (depends on 1) The imaging device according to claim 1, wherein the amplifier comprises two transistors. ### Claim 8 (depends on 1) The imaging device according to claim 1, further comprising: an A/D conversion circuit to convert, analog data into digital data; and a switch to stop power supply to the A/D conversion circuit during a period in the second shooting mode. ### Claim 9 An imaging device comprising: an operation button configured to switch: a first shooting mode configured to electrically connect a photodiode and an amplifier through a first transistor, a switch and a first wiring; and a second shooting mode configured to electrically connect the photodiode and the amplifier through the first transistor, the switch and a second transistor, wherein the operation button is configured to switch the electrical connection through the first wiring of the first shooting mode and the electrical connection through the second transistor of the second shooting mode by the switch, wherein the first transistor comprises an oxide semiconductor, and wherein a gate of the second transistor is electrically connected to one of a source and a drain of the second transistor. ### Claim 10 (depends on 9) The imaging device according to claim 9, further comprising a display screen, wherein the display screen is configured to display the operation button on the display screen. ### Claim 11 (depends on 9) The imaging device according to claim 9, wherein the first shooting mode is a mode to produce an image during one period, and wherein the second shooting mode is one of a long exposure mode to produce an image during continuous periods and a multiple exposure mode to produce an image obtained by superimposition of a plurality of images during a plurality of periods. ### Claim 12 (depends on 9) The imaging device according to claim 9, further comprising a capacitor, wherein the capacitor is configured to accumulate charge generated by the photodiode. ### Claim 13 (depends on 9) The imaging device according to claim 9, wherein the first transistor is a transfer transistor. ### Claim 14 (depends on 9) The imaging device according to claim 9, wherein the first transistor and the photodiode overlap each other. ### Claim 15 (depends on 9) The imaging device according to claim 9, wherein the oxide semiconductor is an In—Ga—Zn oxide. ### Claim 16 (depends on 9) The imaging device according to claim 9, wherein the amplifier comprises two transistors. ### Claim 17 (depends on 9) The imaging device according to claim 9, further comprising: an A/D conversion circuit to convert analog data into digital data; and a switch to stop power supply to the A/D conversion circuit during a period in the second shooting mode.