# US 2018/0323253 A1 · Semiconductor devices with through-substrate coils for wireless signal and power coupling > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323253 A1 - Document ID: US20180323253A1 - Status: Published application - Kind: A1 - Application number: 15/584,310 - Filed: 2017-05-02 - Published: 2018-11-08 - Earliest claimed: 2017-05-02 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Kyle K. Kirby - Web page: https://patentgrep.com/patent/US20180323253A1 ## CPC - H10D 1/20: Inductors - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H10W 90/00: Package configurations - H10W 44/00: Electrical arrangements for controlling or matching impedance - H10W 90/293: {characterised by non-galvanic coupling between the chips, e.g. capacitive coupling} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device comprising a substrate and a substantially spiral-shaped conductor is provided. The substantially spiral-shaped conductor extends substantially into the substrate and has a spiral axis substantially perpendicular to a surface of the substrate. The substantially spiral-shaped conductor can be configured to be wirelessly coupled to another substantially spiral-shaped conductor in another semiconductor device. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate having a front side and a back side; a plurality of circuit elements on the front side of the substrate; and a spiral-shaped conductor extending downward from the front side of the substrate into the substrate and having a spiral axis perpendicular to the front side of the substrate, wherein opposite ends of the spiral-shaped conductor are electrically connected to at least one of the plurality of circuit elements. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the spiral-shaped conductor is configured to be wirelessly coupled to another spiral-shaped conductor in another semiconductor device. ### Claim 3 (depends on 1) The semiconductor device of claim 1, further comprising a layer of insulating material covering the spiral-shaped conductor. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the substrate has a thickness, and wherein the substantially spiral-shaped conductor extends into the substrate by at least half of the thickness. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the spiral-shaped conductor extends completely through the substrate. ### Claim 6 (depends on 1) The semiconductor device of claim 1, wherein the substrate is a silicon substrate between 10 μm and 200 μm thick, and wherein the spiral-shaped conductor extends into the substrate by at least 30 μm. ### Claim 7 (depends on 1) The semiconductor device of claim 1, wherein the spiral-shaped conductor spans an area of between 80 μm and 600 μm across. ### Claim 8 (depends on 1) The semiconductor device of claim 1, wherein turns of the spiral-shaped conductor each have a width of between about 15 μm and 75 μm across. ### Claim 9 (canceled) ### Claim 10 A semiconductor package, comprising: a first die including: a first substrate having a front side and a back side, a first plurality of circuit elements on the front side of the first substrate, and a first spiral-shaped conductor extending downward from the front side of the first substrate into the first substrate and having a spiral axis perpendicular to the front side of the first substrate; and a second die including: a second substrate having a front side and a back side, a second plurality of circuit elements on the front side of the second substrate, and a second spiral-shaped conductor, wherein the first spirally-shaped conductor and the second spirally-shaped conductor are wirelessly coupled. ### Claim 11 (depends on 10) The semiconductor package of claim 10, wherein the first spirally-shaped conductor and the second substantially spiral-shaped conductors conductor are configured to wirelessly communicate by inductive coupling. ### Claim 12 (depends on 10) The semiconductor package of claim 10, wherein the first spirally-shaped conductor and the second spiral-shaped conductor are configured to wirelessly communicate by capacitive coupling. ### Claim 13 (depends on 10) The semiconductor package of claim 10, wherein each of the first spirally-shaped conductor and the second spiral-shaped conductor has a span of between 80 μm and 600 μm across. ### Claim 14 (depends on 10) The semiconductor package of claim 10, wherein the first spirally-shaped conductor and the second spiral-shaped conductors conductor are coaxially aligned. ### Claim 15 (depends on 10) The semiconductor package of claim 10, wherein the first substrate has a thickness, and wherein the first spiral-shaped conductor extends into the substrate by at least half of the thickness. ### Claim 16 (depends on 10) The semiconductor package of claim 10, wherein the first spiral-shaped conductor extends completely through the first substrate. ### Claim 17 (depends on 10) The semiconductor package of claim 10, wherein the second spiral-shaped conductor extends downward from the front side of the second substrate into the second substrate. ### Claim 18 (depends on 10) The semiconductor package of claim 10, wherein the first die and the second die are stacked in a front-to-back arrangement. ### Claim 19 A semiconductor package, comprising: a plurality of dies arranged in a stack, each die including a substrate, a plurality of circuit elements on a front side of the substrate, and a spiral-shaped conductor having a spiral axis perpendicular to a surface of the substrate, wherein adjacent dies of the plurality of dies are wirelessly coupled by the respective spiral-shaped conductors thereof, and wherein the spiral-shaped conductor of a first die of the plurality of dies extends downward from the front side of the substrate of the first die into the substrate thereof of the first die. ### Claim 20 (depends on 19) The semiconductor package of claim 19, wherein the plurality of dies includes more than two dies.