# US 2018/0323247 A1 · Micro display device and display integrated circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323247 A1 - Document ID: US20180323247A1 - Status: Published application - Kind: A1 - Application number: 15/966,260 - Filed: 2018-04-30 - Published: 2018-11-08 - Earliest claimed: 2017-05-02 - Assignees: LG Display Co., Ltd. - Applicants: LG Display Co., Ltd. - Inventors: UnSang YU; Ho-Jin KIM; Gyungmin KIM - Web page: https://patentgrep.com/patent/US20180323247A1 ## CPC - H10K 59/1213: {the pixel elements being TFTs} - H10D 86/425: {having different crystal properties in different TFTs or within an individual TFT} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/1216: {the pixel elements being capacitors} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A micro display device and a display integrated circuit are provided. Embodiments of the micro display device includes: a silicon substrate; a pixel array including a plurality of sub-pixels arranged in a pixel array zone of the silicon substrate; and driver circuits positioned in a circuit zone disposed around the pixel array zone of the silicon substrate, in which all or some of transistors in the pixel array zone and transistors in the circuit zone have different current-voltage transmission characteristics, thereby having excellent driving performance and display performance. ## Claims ### Claim 1 A micro display device, comprising: a silicon substrate; a pixel array including a plurality of sub-pixels arranged in a pixel array zone of the silicon substrate; and driver circuits disposed in a circuit zone of the silicon substrate, wherein the circuit zone is positioned around the pixel array zone of the silicon substrate, and all or some of transistors in the pixel array zone and transistors in the circuit zone have different current-voltage transmission characteristics. ### Claim 2 (depends on 1) The micro display device of claim 1, wherein the current-voltage transmission characteristics of the transistors in the circuit zone are defined as a first current-voltage transmission graph showing a current change according to a voltage change, the current-voltage transmission characteristics of the transistors in the pixel array zone are defined as a second current-voltage transmission graph showing a current change according to a voltage change, and the slope in a current change section in the second current-voltage transmission graph is smaller than the slope in a current change section in the first current-voltage transmission graph. ### Claim 3 (depends on 1) The micro display device of claim 1, wherein the transistors in the circuit zone are Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) and the transistors in the pixel array zone are Thin Film Transistors (TFT). ### Claim 4 (depends on 1) The micro display device of claim 1, wherein the transistors in the pixel array zone are one of an amorphous silicon TFT, a poly silicon TFT, an oxide TFT, and an organic TFT. ### Claim 5 (depends on 1) The micro display device of claim 1, wherein the transistors in the circuit zone and the transistors in the pixel array zone are MOSFETs having different current-voltage transmission characteristics. ### Claim 6 (depends on 1) The micro display device of claim 1, wherein the doping concentration of the transistors in the circuit zone and the doping concentration of the transistors in the pixel array zone are different from each other. ### Claim 7 (depends on 6) The micro display device of claim 6, wherein the doping concentration of the transistors in the circuit zone is higher than the doping concentration of the transistors in the pixel array zone. ### Claim 8 (depends on 1) The micro display device of claim 1, wherein channel characteristic values of the transistors in the circuit zone and channel characteristic values of the transistors in the pixel array zone are different from each other, and the channel characteristic values include one or more of a channel length, a channel width, and a channel thickness. ### Claim 9 (depends on 8) The micro display device of claim 8, wherein the channel length of the transistors in the circuit zone is smaller than the channel length of the transistors in the pixel array zone, and the channel width or the channel thickness of the transistors in the circuit zone is larger than the channel width or the channel thickness of the transistors in the pixel array zone. ### Claim 10 (depends on 1) The micro display device of claim 1, wherein a dummy zone exists between the circuit zone and the pixel array zone on the silicon substrate, and a dummy pixel including a pixel electrode and a transistor having the same current-voltage transmission characteristic as the transistors in the pixel array zone exists in the dummy zone of the silicon substrate. ### Claim 11 (depends on 1) The micro display device of claim 1, wherein the driver circuits include a source driver circuit, a gate driver circuit, a control driver circuit, and a power circuit. ### Claim 12 (depends on 1) The micro display device of claim 1, wherein the sub-pixels each include: an organic light emitting diode having a first electrode and a second electrode; a driver transistor configured to drive the organic light emitting diode; a first transistor electrically connected between a data line and a first node that is a gate node of the driver transistor; and a capacitor electrically connected between the first node of the driver transistor and a second node that is a source node or a drain node of the driver transistor, an encapsulation layer is disposed on the second electrode, and the encapsulation layer extends from the pixel array zone to the circuit zone. ### Claim 13 (depends on 12) The micro display device of claim 12, wherein the sub-pixels each further include a second transistor electrically connected between the second node of the driver transistor and a sense line. ### Claim 14 (depends on 12) The micro display device of claim 12, wherein the driver transistor in the pixel array zone is different in current-voltage transmission characteristic from the transistors in the circuit zone. ### Claim 15 (depends on 13) The micro display device of claim 13, wherein the first transistor and the second transistor in the pixel array zone are different in current-voltage transmission characteristic from the transistors in the circuit zone. ### Claim 16 (depends on 13) The micro display device of claim 13, wherein one or more of the first transistor and the second transistor in the pixel array zone are the same in current-voltage transmission characteristic as the transistors in the circuit zone. ### Claim 17 A display integrated circuit, comprising: a silicon substrate; a plurality of sub-pixels arranged in a pixel array zone of the silicon substrate; and driver circuits disposed in a circuit zone of the silicon substrate, wherein the circuit zone is positioned around the pixel array zone, and transistors in the pixel array zone and transistors in the circuit zone have different current-voltage transmission characteristics. ### Claim 18 (depends on 17) The display integrated circuit of claim 17, wherein the transistors in the pixel array zone and the transistors in the circuit zone are different kinds of transistors. ### Claim 19 (depends on 17) The display integrated circuit of claim 17, wherein the transistors in the pixel array zone and the transistors in the circuit zone are the same kind of transistors. ### Claim 20 (depends on 19) The display integrated circuit of claim 19, wherein the doping concentration of the transistors in the pixel array zone and the doping concentration of the transistors in the circuit zone are different from each other. ### Claim 21 (depends on 19) The display integrated circuit of claim 19, wherein channel characteristic values of the transistors in the pixel array zone and the channel characteristic values of the transistors in the circuit zone are different from each other.