# US 2018/0323236 A1 · Highly reliable light emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323236 A1 - Document ID: US20180323236A1 - Status: Published application - Kind: A1 - Application number: 15/971,931 - Filed: 2018-05-04 - Published: 2018-11-08 - Earliest claimed: 2017-05-04 - Assignees: Seoul Viosys Co., Ltd. - Applicants: Seoul Viosys Co., Ltd. - Inventors: Se Hee Oh; Jong Kyu Kim; Hyun A Kim - Web page: https://patentgrep.com/patent/US20180323236A1 ## CPC - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/831: characterised by their shape - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8314: {extending at least partially onto an outer side surface of the bodies} - H10H 20/835: {Reflective materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10H 20/0364: {of interconnections} - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Disclosed herein is a highly reliable light emitting diode. In the light emitting diode, a connector connecting light emitting cells to each other is spaced apart from bump pads in a lateral direction so as not to overlap each other. Accordingly, it is possible to provide a chip-scale flip-chip type light emitting diode having good properties in terms of heat dissipation performance and electrical reliability. ## Claims ### Claim 1 A light emitting diode device comprising: an array of light emitting cells including a plurality of light emitting cells arranged in series in a flow direction of an electrical current flowing through the plurality of light emitting cells, each light emitting cell including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; an ohmic reflection layer disposed on the second conductivity type semiconductor layer of each of the light emitting cells to form ohmic contact with the second conductivity type semiconductor layer; a lower insulation layer covering the light emitting cells and the ohmic reflection layer, the lower insulation layer having first openings exposing the first conductivity type semiconductor layer of each of the light emitting cells and second openings exposing the ohmic reflection layer of each of the light emitting cells; a connector disposed on the lower insulation layer and electrically connecting adjacent light emitting cells to each other; a first pad metal layer electrically connected to the first conductivity type semiconductor layer of one of the light emitting cells disposed last in the flow direction through the first openings of the lower insulation layer; a second pad metal layer electrically connected to the ohmic reflection layer of another of the light emitting cells disposed first in the flow direction through the second openings of the lower insulation layer; an upper insulation layer covering the connector and the first and second pad metal layers, the upper insulation layer having a third opening and a fourth opening exposing upper surfaces of the first and second pad metal layers, respectively; and a first bump pad and a second bump pad that are respectively connected to the upper surfaces of the first pad metal layer and the second pad metal layer exposed through the third and fourth openings, wherein the connector is spaced apart from the first and second bump pads along a direction without overlapping the first and second bump pads. ### Claim 2 (depends on 1) The light emitting diode device of claim 1, wherein each of the light emitting cells at least partially overlaps at least one of the first and second bump pads. ### Claim 3 (depends on 2) The light emitting diode device of claim 2, wherein each of the first and second bump pads are disposed over at least two light emitting cells. ### Claim 4 (depends on 1) The light emitting diode device of claim 1, wherein the first pad metal layer is disposed within an upper region of the last light emitting cell and the second pad metal layer is disposed within an upper region of the first light emitting cell. ### Claim 5 (depends on 4) The light emitting diode device of claim 4, wherein the first and second pad metal layers are spaced apart from the connector. ### Claim 6 (depends on 1) The light emitting diode device of claim 1, wherein the connector and the first and second pad metal layers include the same material and placed at the same level. ### Claim 7 (depends on 1) The light emitting diode device of claim 1, wherein the second opening of the lower insulation layer is spaced apart from the opening of the upper insulation layer exposing the second pad metal layer in the direction. ### Claim 8 (depends on 1) The light emitting diode device of claim 1, wherein at least one light emitting cell comprises a bay or a via-hole formed through the second conductivity type semiconductor layer and the active layer to expose the first conductivity type semiconductor layer, and the connector is electrically connected to the first conductivity type semiconductor layer of the light emitting cell through the exposure region. ### Claim 9 (depends on 1) The light emitting diode device of claim 1, wherein the upper insulation layer covers a region between an edge of the substrate and edges of the light emitting cells and a distance between an edge of the upper insulation layer and the connector is 15 μm or more. ### Claim 10 (depends on 1) The light emitting diode device of claim 1, wherein the connector directly contacts the first conductivity type semiconductor layer exposed through the first openings and the ohmic reflection layer exposed through the second openings. ### Claim 11 (depends on 1) The light emitting diode device of claim 1, further comprising: at least one floating metal layer disposed on the lower insulation layer and covered by the upper insulation layer, wherein each floating metal layer is insulated from the first pad metal layer, the second pad metal layer and the connector. ### Claim 12 (depends on 11) The light emitting diode device of claim 11, wherein the at least one floating metal includes a same material as the connector and the first and second pad metal layers. ### Claim 13 (depends on 12) The light emitting diode device of claim 12, wherein the at least one floating metal layer comprises a floating metal layer partially covering a region between two adjacent light emitting cells. ### Claim 14 (depends on 11) The light emitting diode device of claim 11, wherein the at least one floating metal layer comprises a plurality of floating metal layers and at least one of the floating metal layers has a same shape as the second pad metal layer. ### Claim 15 (depends on 1) The light emitting diode device of claim 1, further comprising: a substrate on which the plurality of light emitting cells is disposed. ### Claim 16 A light emitting diode device comprising: an array of light emitting cells including a plurality of light emitting cells arranged in series in a flow direction of an electrical current flowing through the plurality of light emitting cells, each light emitting cell including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a lower insulation layer covering the light emitting cells and having openings on each of the light emitting cells; a connector disposed on the lower insulation layer and electrically connecting adjacent light emitting cells to each other; a first pad metal layer electrically connected to the first conductivity type semiconductor layer of one of the light emitting cells disposed last in the flow direction through some of the openings of the lower insulation layer; a second pad metal layer electrically connected to the second conductivity type semiconductor layer of another of the light emitting cells disposed first in the flow direction through the others of the openings of the lower insulation layer; an upper insulation layer covering the connector and the first and second pad metal layers, the upper insulation layer having openings exposing upper surfaces of the first and second pad metal layers, respectively; and a first bump pad and a second bump pad that are respectively connected to the upper surfaces of the first pad metal layer and the second pad metal layer exposed through the openings of the upper insulation layer, wherein the connector is spaced apart from the first and second bump pads in a direction without overlapping the first and second bump pads. ### Claim 17 A light emitting diode device comprising: an array of light emitting cells including a plurality of light emitting cells arranged in series in a flow direction of an electrical current flowing through the plurality of light emitting cells, each light emitting cell including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a lower insulation layer covering the light emitting cells and having a plurality of openings on each of the light emitting cells; a connector disposed on the lower insulation layer and electrically connecting adjacent light emitting cells to each other; at least one floating metal layer disposed on the lower insulation layer and spaced apart from the connector; an upper insulation layer covering the connector and the at least one floating metal layer; a first bump pad disposed on the upper insulation layer and electrically connected to the first conductivity type semiconductor layer of one of the plurality of light emitting cells; and a second bump pad disposed on the upper insulation layer and electrically connected to the second conductivity type semiconductor layer of another light emitting cell of the plurality of light emitting cells, wherein the connector is spaced apart from the first and second bump pads in a direction without overlapping the first and second bump pads, and the at least one floating metal layer comprises a floating metal layer at least partially overlapping one of the first and second bump pads. ### Claim 18 (depends on 17) The light emitting diode of claim 17, wherein the at least one floating metal layer comprises a floating metal layer partially covering a region between the light emitting cells. ### Claim 19 (depends on 17) The light emitting diode of claim 17, wherein the at least one floating metal layer comprises a floating metal layer disposed within an area on one of the light emitting cells. ### Claim 20 (depends on 19) The light emitting diode of claim 19, further comprising: a first pad metal layer electrically connected to the first conductivity type semiconductor layer of one of the plurality of light emitting cells through some of the opening of the lower insulation layer; and a second pad metal layer electrically connected to the second conductivity type semiconductor layer of another light emitting cell of the plurality of light emitting cells through the others of the opening of the lower insulation layer, wherein the first pad metal layer and the second pad metal layer at least partially overlap the first and second bump pads, respectively, and the connector is spaced apart from the first and second pad metal layers.