# US 2018/0323232 A1 · Solid-state imaging device

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- Number: US 2018/0323232 A1
- Document ID: US20180323232A1
- Status: Published application
- Kind: A1
- Application number: 16/033,478
- Filed: 2018-07-12
- Published: 2018-11-08
- Earliest claimed: 2016-01-15
- Assignees: TowerJazz Panasonic Semiconductor Co., Ltd.
- Applicants: Towerjazz Panasonic Semiconductor Co., Ltd.
- Inventors: Masahiro ODA
- Web page: https://patentgrep.com/patent/US20180323232A1

## CPC

- H10F 30/20: the devices having potential barriers, e.g. phototransistors
- H04N 25/62: Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N 25/70: SSIS architectures; Circuits associated therewith
- H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors
- H10F 39/12: Image sensors
- H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/1847: {Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/1865: {Overflow drain structures}
- H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

A solid-state imaging device includes a plurality of pixels two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion. One or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion. The rest of the shallow light receiving portions forms a first light receiving portion. Excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.

## Claims

### Claim 1

A solid-state imaging device, comprising:
a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion,
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion, and the rest of the shallow light receiving portions forms a first light receiving portion, and
excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.

### Claim 2 (depends on 1)

The solid-state imaging device of claim 1, wherein
a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion is smaller than a potential barrier of a shallow horizontal separation portion provided between a plurality of the shallow light receiving portions.

### Claim 3 (depends on 1)

The solid-state imaging device of claim 1, wherein
excess electric charge in the second light receiving portion is discharged to the first light receiving portion or the semiconductor substrate.

### Claim 4 (depends on 3)

The solid-state imaging device of claim 3, wherein
a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion, and a potential barrier of a vertical overflow barrier provided under the deep light receiving portion are smaller than a potential barrier of a deep horizontal separation portion provided between the deep light receiving portions.

### Claim 5 (depends on 1)

The solid-state imaging device of claim 1, wherein
excess electric charge in the second light receiving portion is discharged to the semiconductor substrate.

### Claim 6 (depends on 5)

The solid-state imaging device of claim 5, wherein
a potential barrier of a vertical overflow barrier provided under the deep light receiving portion is smaller than a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion, and a potential barrier of a deep horizontal separation portion provided between the deep light receiving portions.

### Claim 7 (depends on 1)

The solid-state imaging device of claim 1, wherein,
each of the plurality of pixels further includes a first transfer gate for transferring a signal from the first light receiving portion, and
the first transfer gate is open and electric charge is discharged from the first light receiving portion through the first transfer gate when imaging is performed using the second receiving portion.

### Claim 8 (depends on 1)

The solid-state imaging device of claim 1, wherein,
each of the plurality of pixels further includes a second transfer gate for transferring a signal from the second light receiving portion, and
the second transfer gate is open and electric charge is discharged from the second light receiving portion through the second transfer gate when imaging is performed using the first receiving portion.