# US 2018/0323231 A1 · Solid-state imaging device and imaging apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323231 A1 - Document ID: US20180323231A1 - Status: Published application - Kind: A1 - Application number: 16/036,347 - Filed: 2018-07-16 - Published: 2018-11-08 - Earliest claimed: 2016-01-19 - Assignees: Olympus Corporation - Applicants: Olympus Corporation - Inventors: Haruhisa Saito - Web page: https://patentgrep.com/patent/US20180323231A1 ## CPC - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/018: {of hybrid image sensors} - H10F 39/12: Image sensors - H10F 39/182: {Colour image sensors} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/809: {of hybrid image sensors} - H10F 39/811: {Interconnections} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/212: {Top-view shapes or dispositions, e.g. top-view layouts of the vias} - H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes - H10W 90/00: Package configurations - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A solid-state imaging device has a first substrate, a second substrate, and a third substrate. The first substrate has a plurality of first photoelectric conversion elements. The second substrate has a plurality of first through electrodes. The plurality of first photoelectric conversion elements are disposed in a pixel area. The plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area. ## Claims ### Claim 1 A solid-state imaging device comprising: a first substrate having a first principal surface, a second principal surface, and a plurality of first photoelectric conversion elements, the first principal surface and the second principal surface facing in opposite directions, the plurality of first photoelectric conversion elements being disposed in a matrix form; a second substrate having a third principal surface, a fourth principal surface, one or more first layers, and a plurality of first through electrodes, the third principal surface and the fourth principal surface facing in opposite directions, the third principal surface facing the second principal surface, the plurality of first through electrodes penetrating at least one of the first layers; and a third substrate having a fifth principal surface and a sixth principal surface, the fifth principal surface and the sixth principal surface facing in opposite directions, the fifth principal surface facing the fourth principal surface, wherein the plurality of first photoelectric conversion elements are disposed in a pixel area, the plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area, the first substrate and the second substrate are electrically connected to each other, the second substrate comprises: a first memory circuit disposed in the first area and configured to temporarily store signals output from the plurality of first photoelectric conversion elements; a processing circuit disposed in the first area and configured to process the signals stored in the first memory circuit; and a scanning circuit disposed in the second area and configured to control the plurality of first photoelectric conversion elements, the first memory circuit, and the processing circuit, and the third substrate comprises: a second memory circuit connected to the scanning circuit by the plurality of first through electrodes and configured to store the signals processed by the processing circuit. ### Claim 2 (depends on 1) The solid-state imaging device according to claim 1, further comprising: a plurality of microbumps disposed between the second principal surface and the third principal surface, and wherein each microbump included in the plurality of microbumps is disposed for each first photoelectric conversion element included in the plurality of first photoelectric conversion elements and electrically connects the first photoelectric conversion element and the first memory circuit to each other. ### Claim 3 (depends on 1) The solid-state imaging device according to claim 1, wherein the second substrate includes a plurality of processing circuits including the processing circuit, each processing circuit included in the plurality of processing circuits is disposed for each column in an arrangement of the plurality of first photoelectric conversion elements, and each processing circuit included in the plurality of processing circuits processes the signals output from the first photoelectric conversion element corresponding to the column and stored in the first memory circuit. ### Claim 4 (depends on 1) The solid-state imaging device according to claim 1, further comprising: a first connection layer disposed between the first substrate and the second substrate and connecting the first substrate and the second substrate to each other, wherein a plurality of microbumps are disposed in the first connection layer. ### Claim 5 (depends on 1) The solid-state imaging device according to claim 1, further comprising: a second connection layer that is disposed between the second substrate and the third substrate and connects the second substrate and the third substrate to each other. ### Claim 6 (depends on 1) The solid-state imaging device according to claim 1, wherein the second substrate further includes at least one of a reading circuit and a plurality of second photoelectric conversion elements, the reading circuit is configured to read the signals from the plurality of first photoelectric conversion elements, and at least one of the reading circuit and the plurality of second photoelectric conversion elements is disposed in the first area. ### Claim 7 (depends on 1) The solid-state imaging device according to claim 1, wherein the third substrate further includes one or more second layers and a plurality of second through electrodes, and the plurality of second through electrodes penetrate at least one of the second layers. ### Claim 8 (depends on 1) An imaging apparatus comprising the solid-state imaging device according to claim 1.