# US 2018/0323204 A1 · Semiconductor memory device

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- Number: US 2018/0323204 A1
- Document ID: US20180323204A1
- Status: Published application
- Kind: A1
- Application number: 16/019,064
- Filed: 2018-06-26
- Published: 2018-11-08
- Earliest claimed: 2014-09-11
- Assignees: Toshiba Memory Corporation
- Applicants: Toshiba Memory Corporation
- Inventors: Mikiko MORI; Ryota Suzuki; Tatsuya Kato; Wataru Sakamoto; Fumie Kikushima
- Web page: https://patentgrep.com/patent/US20180323204A1

## CPC

- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 41/35: with a cell select transistor, e.g. NAND
- H10B 41/41: of a memory region comprising a cell select transistor, e.g. NAND
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device according to an embodiment includes two semiconductor pillars, a connection member connected between the two semiconductor pillars, and a contact connected to the connection member. There is not a conductive member disposed between the two semiconductor pillars.

## Claims

### Claim 1

A semiconductor memory device comprising:
a first semiconductor pillar extending in a first direction;
a second semiconductor pillar extending in the first direction, the first semiconductor pillar and the second semiconductor pillar being arranged in a second direction intersecting the first direction;
a first electrode film extending in a third direction intersecting the first direction and the second direction;
a second electrode film extending in the third direction, the first electrode film and the second electrode film being arranged in the second direction;
a first memory portion provided between the first semiconductor pillar and the first electrode film;
a second memory portion provided between the second semiconductor pillar and the second electrode film;
a first connection member being electrically connected in common to an upper portion of the first semiconductor pillar and an upper portion of the second semiconductor pillar;
a first contact, a lower portion of the first contact being electrically connected to the first connection member; and
a first upper interconnect extending in the second direction and electrically connected to an upper portion of the first contact.