# US 2018/0323166 A1 · Semiconductor device and method for manufacturing same

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- Number: US 2018/0323166 A1
- Document ID: US20180323166A1
- Status: Published application
- Kind: A1
- Application number: 15/773,169
- Filed: 2016-11-02
- Published: 2018-11-08
- Earliest claimed: 2015-11-05
- Assignees: Kabushiki Kaisha Shinkawa
- Applicants: Shinkawa Ltd.
- Inventors: Yuu HASEGAWA; Naoki SEKINE; Yoshihito HAGIWARA
- Web page: https://patentgrep.com/patent/US20180323166A1

## CPC

- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/07173: {Means for moving chips, wafers or other parts, e.g. conveyor belts}
- H10W 72/075: {of bond wires}
- H10W 72/5522: {comprising gold [Au]}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The disclosure includes: a first lifting step for bonding a wire at a first position (13) with a capillary and for lifting the capillary up to a first height H1 while feeding the wire; a circular arc lifting step for carrying out a circular arc motion for moving the capillary in a circular arc toward a second position (14) by a first distance (L5), and then carrying out a lifting motion for lifting the capillary while feeding the wire; a circular arc motion step for moving the capillary in a circular arc toward the first position (13) by a second distance (L3+L4); a second lifting step for lifting the capillary up to a second height H4; and a looping step for looping the capillary to the second position (14), thereby forming a wire loop having a predetermined height on a substrate by bonding the wire at the second position (14).

## Claims

### Claim 1

A manufacturing method of a semiconductor device, comprising:
a first lifting step for bonding a wire at a first position on a substrate by a capillary and for lifting the capillary to a first height while feeding the wire from the capillary;
a circular arc lifting step for carrying out a circular arc motion for moving the capillary in a circular arc in a direction toward a second position on the substrate that is spaced apart from the first position by a first distance, and then carrying out a lifting motion for lifting the capillary while feeding the wire from the capillary to apply a bending habit to the wire;
a circular arc motion step for moving the capillary in a circular arc in a direction toward the first position by a second distance longer than the first distance;
a second lifting step for lifting the capillary up to a second height higher than the first height while feeding the wire from the capillary; and
a looping step for looping the capillary to the second position; wherein
by bonding the wire at the second position, a wire loop having a predetermined height is formed on the substrate.

### Claim 2 (depends on 1)

The manufacturing method of a semiconductor device according to claim 1, wherein
the circular arc lifting step is carried out for several times.

### Claim 3 (depends on 1)

The manufacturing method of a semiconductor device according to claim 1, wherein
the capillary is a stepped cone shape having a tapered elementary part and a front part thinner than the elementary part;
the wire loop is a mountain shape whose height from the substrate is higher than a length of the front part of the capillary, and an angle of a sloping part on the second position side of the wire loop with respect to an imaginary perpendicular line of the substrate is larger than a spread angle of an external surface of the elementary part with respect to a central axis of the capillary;
the first height is 60-90% of the height of the wire loop;
the first distance is 50-80% of the height of the wire loop;
the second distance is 110-130% of the height of the wire loop; and
the second height is 160-210% of the height of the wire loop.

### Claim 4

A semiconductor device, which has a mountain-shaped wire loop with a predetermined height that connects between a first position on a substrate to a second position on the substrate spaced apart from the first position by a first distance, comprising:
a first junction, which is formed by bonding a wire at the first position by a capillary;
a top, which is formed, after forming the first junction, by lifting the capillary up to a first height while feeding the wire from the capillary, then carrying out a circular arc motion for moving the capillary in a circular arc from the first position toward a direction of a second position, then carrying out a lifting motion for lifting the capillary while feeding the wire from the capillary, then moving the capillary in a circular arc toward the direction of the first position by a second distance longer than the first distance, then lifting the capillary up to a second height higher than the first height while feeding the wire from the capillary, and then looping the capillary to a second position; and
a second junction, which is formed by bonding the wire to the second position.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, which is formed by
carrying out, for several times, the circular arc motion for moving the capillary in a circular arc from the first position toward a direction of the second position and the lifting motion for lifting the capillary while feeding the wire from the capillary after the circular arc motion.

### Claim 6 (depends on 4)

The semiconductor device according to claim 4, wherein
the capillary is a stepped cone shape having a tapered elementary part and a front part thinner than the elementary part;
the wire loop is a mountain shape whose height from the substrate is higher than a length of the front part of the capillary, and an angle of a sloping part on the second position side of the wire loop with respect to an imaginary perpendicular line of the substrate is larger than a spread angle of an external surface of the elementary part with respect to a central axis of the capillary;
the first height is 60-90% of the height of the wire loop;
the first distance is 50-80% of the height of the wire loop;
the second distance is 110-130% of the height of the wire loop; and
the second height is 160-210% of the height of the wire loop.