# US 2018/0323158 A1 · Magnetic inductor stack including insulating material having multiple thicknesses

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- Number: US 2018/0323158 A1
- Document ID: US20180323158A1
- Status: Published application
- Kind: A1
- Application number: 15/584,766
- Filed: 2017-05-02
- Published: 2018-11-08
- Earliest claimed: 2017-05-02
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Hariklia Deligianni; Bruce B. Doris; Eugene J. O'Sullivan; Naigang Wang
- Web page: https://patentgrep.com/patent/US20180323158A1

## CPC

- H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)}
- H01F 17/0013: {with stacked layers}
- H01F 41/046: {structurally combined with ferromagnetic material}
- H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers}
- H01F 2017/0066: {with a magnetic layer}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

## Abstract

Provided is an inductor structure. In embodiments of the invention, the inductor structure includes a laminated first stack and a laminated second stack. The laminated first stack includes one or more layers of a magnetic material and one or more layers of a first insulating material having a thickness. The inductor structure also includes at least one layer of a second insulating material having a thickness. The thickness of the at least one layer of the second insulating material is different than the thickness of each of the layers of the first insulating material.

## Claims

### Claim 1

An inductor structure for use in a semiconductor device, comprising:
a laminated first stack including:
one or more layers of a magnetic material; and
one or more layers of a first insulating material having a thickness, wherein the layers of magnetic material alternate with the first layers of insulating material; and
at least one layer of a second insulating material having a thickness; wherein:
the thickness of the at least one layer of the second insulating material is different than the thickness of each of the layers of the first insulating material.

### Claim 2 (depends on 1)

The inductor structure of claim 1, wherein the magnetic material includes one or more materials selected from the group comprising a Co containing magnetic material, FeTaN, and FeNi.

### Claim 3 (depends on 1)

The inductor structure of claim 1, wherein the insulating material includes one or more of silicon dioxide, silicon nitride, silicon oxynitride, magnesium oxide, and aluminum oxide.

### Claim 4 (depends on 1)

The inductor structure of claim 1, wherein the thickness of the at least one layer of second insulating material is greater than the thickness of each of the layers of the first insulating material.

### Claim 5 (depends on 4)

The inductor structure of claim 4, further comprising a laminated second stack including:
one or more layers of the magnetic material; and
one or more layers of a third insulating material having a thickness, wherein:
the layers of magnetic material alternate with the one or more layers of the third insulating material;
the thickness of the at least one layer of the second insulating material is greater than the thickness of each of the layers of the third insulating material;
the at least one layer of the second insulating material is located between the laminated first stack and the laminated second stack.

### Claim 6 (depends on 1)

The inductor structure of claim 1, wherein the thickness of each of the layers of the first insulating material is greater than the thickness of the at least one layer of the second insulating material.

### Claim 7 (depends on 6)

The inductor structure of claim 6, further comprising a laminated second stack including:
one or more layers of the magnetic material; and
one or more layers of the third insulating material having a thickness; wherein:
the layers of magnetic material alternate with the layers of the third insulating material;
the thickness of each of the layers of the third insulating material is greater than the thickness of the at least one layer of the second insulating material; and
the at least one layer of the second insulating material is located between the laminated first stack and the laminated second stack.

### Claim 8 (depends on 7)

The inductor structure of claim 7, further comprising a laminated third stack including the at least one layer of the second insulating material.

### Claim 9 (depends on 1)

The inductor structure of claim 1, wherein the layers of first insulating material include layers having a thickness of about 50 nm to about 1 μm.

### Claim 10 (depends on 1)

The inductor structure of claim 1, wherein the layers of first insulating material include layers have a thickness of about 50 nm and the at least one layer of second insulating material has a thickness of about 500 nm.

### Claim 11

An inductor structure for use in a semiconductor device, comprising:
layers of magnetic material; and
a first layers of insulating material having a first thickness; and
a second layer of insulating material having a second thickness; wherein
the second thickness is greater than the first thickness.

### Claim 12 (depends on 11)

The inductor structure of claim 11, wherein:
the magnetic material includes one or more materials selected from the group comprising a Co containing magnetic material, FeTaN, and FeNi; and
the insulating material includes one or more of silicon dioxide, silicon nitride, silicon oxynitride, magnesium oxide, and aluminum oxide.

### Claim 13 (depends on 11)

The inductor structure of claim 11, comprising:
a laminated first stack including:
the layers of magnetic material; and
the first layers of insulating material having the first thickness, the first layers of magnetic material alternating with the first layers of insulating material.

### Claim 14

A method of forming an inductor structure for use in a semiconductor device, comprising:
forming a first laminated first stack including:
depositing one or more layers of magnetic material; and
depositing one or more layers of a first insulating material having a first thickness, wherein the layers of magnetic material are deposited in an alternating manner with the layers of the first insulating material; and
depositing at least one layer of a second insulating material layer having a second thickness, the second thickness being different than the first thickness.

### Claim 15 (depends on 14)

The method of claim 14, wherein:
the magnetic material includes one or more materials selected from the group comprising a Co containing magnetic material, FeTaN, and FeNi; and
the insulating material includes one or more of silicon dioxide, silicon nitride, silicon oxynitride, magnesium oxide, and aluminum oxide.

### Claim 16 (depends on 14)

The method of claim 14, wherein:
the second thickness is greater than the first thickness; and
the method further comprises forming a laminated second stack, the method including:
depositing the layers of magnetic material; and
depositing layers of a third insulating material having a third thickness; wherein:
the layers including magnetic material are deposited in an alternating manner with the layers of the third insulating material;
the second thickness is greater than the third thickness; and
the at least one second insulating material layer is located between the laminated first stack and the laminated second stack.

### Claim 17 (depends on 14)

The method of claim 14, wherein:
the first thickness is greater than the second thickness; and
the method further comprises forming a laminated second stack, the method including:
depositing layers of the magnetic material; and
depositing layers of a third insulating material having a third thickness, wherein:
the layers of magnetic material are deposited in an alternating manner with the layers of the third insulating material;
the third thickness is greater than the second thickness; and
the at least one layer of the second insulating material is located between the laminated first stack and the laminated second stack.

### Claim 18 (depends on 17)

The method of claim 17, further comprising forming a laminated third stack including the at least layer of the second insulating material having the second thickness.

### Claim 19 (depends on 14)

The method of claim 14, wherein the first thickness is between about 50 nm to about 1 μm.

### Claim 20 (depends on 14)

The method of claim 14, wherein the first thickness is about 50 nm and the second thickness is about 500 nm.