# US 2018/0323156 A1 · Breakable substrate for semiconductor die > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0323156 A1 - Document ID: US20180323156A1 - Status: Published application - Kind: A1 - Application number: 15/589,493 - Filed: 2017-05-08 - Published: 2018-11-08 - Earliest claimed: 2017-05-08 - Assignees: Infineon Technologies Americas Corp. - Applicants: Infineon Technologies Americas Corp. - Inventors: Eung San Cho; Chuan Cheah - Web page: https://patentgrep.com/patent/US20180323156A1 ## CPC - H10W 42/40: protecting against tampering, e.g. unauthorised inspection or reverse engineering - B41J 2/1753: {Details of contacts on the cartridge, e.g. protection of contacts} - B41J 2/17553: {Outer structure} - B41J 2/17559: {Cartridge manufacturing} - H10W 70/095: {of vias therein} - H10W 70/635: {Through-vias} - H10W 70/65: Shapes or dispositions of interconnections - H10W 74/114: {by a substrate and the encapsulations} - H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts} - H10W 20/023: {the interconnections being through-semiconductor vias} - H10W 20/068: {by using a laser, e.g. laser cutting or laser direct writing} - H10W 20/069: {by forming self-aligned vias or self-aligned contact plugs} - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 99/00: Subject matter not provided for in other groups of this subclass - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - B41J: TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS ## Abstract In some examples, a device includes a substrate and a conductive pad extending through the substrate, wherein the substrate is coupled to the conductive pad at an interface and the substrate extends laterally from the interface to define a substrate extension. In some examples, the device also includes a semiconductor die mounted on the first side of the substrate. In some examples, the device includes a breakpoint that defines a torque tolerance that is less than a torque tolerance of the device at other points. In some examples, the device is configured to break at the breakpoint in response to force being applied to the substrate extension on the first side of the substrate. ## Claims ### Claim 1 A device comprising: a substrate; a conductive pad extending through the substrate, wherein the substrate is coupled to the conductive pad at an interface and the substrate extends laterally from the interface to define a substrate extension; and a semiconductor die mounted on the first side of the substrate, wherein the device includes a breakpoint that defines a torque tolerance that is less than a torque tolerance of the device at other points, and wherein the device is configured to break at the breakpoint in response to force being applied to the substrate extension on the first side of the substrate. ### Claim 2 (depends on 1) The device of claim 1, further comprising an outer conductive element positioned on the first side of the substrate, wherein the outer conductive element is electrically connected to the conductive pad. ### Claim 3 (depends on 2) The device of claim 2, wherein the substrate defines a recess that is positioned between the semiconductor die and the outer conductive element, wherein the breakpoint is located at the recess. ### Claim 4 (depends on 3) The device of claim 3, wherein a thickness of the substrate at the recess is less than one hundred micrometers. ### Claim 5 (depends on 1) The device of claim 1, wherein an exposed surface area of the conductive pad on a first side of the substrate is greater than an exposed surface area of the conductive pad on a second side of the substrate. ### Claim 6 (depends on 5) The device of claim 5, wherein the conductive pad is a first conductive pad, wherein the substrate further includes a second conductive pad extending through the substrate, wherein an exposed surface area of the second conductive pad on a first side of the substrate is greater than an exposed surface area of the second conductive pad on a second side of the substrate, wherein the semiconductor die is electrically connected to the first conductive pad, and wherein the semiconductor die is electrically connected to the second conductive pad. ### Claim 7 (depends on 1) The device of claim 1, wherein the conductive pad comprises: a first metal layer that is exposed on the first side of the substrate, wherein a thickness of the first metal layer is greater than ten micrometers and less than forty micrometers; and a second metal layer that is exposed on the second side of the substrate, wherein a thickness of the second metal layer is greater than twenty micrometers and less than seventy micrometers. ### Claim 8 (depends on 7) The device of claim 7, wherein a width of the first metal layer is greater than a width of the second metal layer, and wherein a length of the first metal layer is greater than a length of the second metal layer. ### Claim 9 (depends on 1) The device of claim 1, wherein a thickness of the substrate is less than two hundred micrometers. ### Claim 10 (depends on 1) The device of claim 1, wherein the substrate includes molding compound. ### Claim 11 (depends on 1) The device of claim 1, wherein the breakpoint is located at the interface. ### Claim 12 (depends on 11) The device of claim 11, further comprising an electrical trace positioned on the substrate extension, wherein the substrate defines a recess that is positioned between the semiconductor die and the electrical trace, and wherein the electrical trace is electrically connected to the conductive pad. ### Claim 13 A method comprising: forming a device including a conductive pad extending through a substrate, wherein the substrate is coupled to the conductive pad at an interface and the substrate extends laterally from the interface to define a substrate extension, wherein the device includes a breakpoint that defines a torque tolerance that is less than a torque tolerance of the device at other points, and wherein the device is configured to break at the breakpoint in response to force being applied to the substrate extension on the first side of the substrate; and mounting a semiconductor die on the first side of the substrate, wherein mounting the semiconductor die includes electrically connecting the semiconductor die to the conductive pad. ### Claim 14 (depends on 13) The method of claim 13, further comprising: forming an outer conductive element on the first side of the substrate; and forming a recess in the substrate between the semiconductor die and the outer conductive element. ### Claim 15 (depends on 13) The method of claim 13, further comprising: forming a second metal layer of the conductive pad, wherein a thickness of the second metal layer is greater than twenty micrometers and less than seventy micrometers; and forming a first metal layer of the conductive pad on the second metal layer, wherein a thickness of the first metal layer is greater than ten micrometers and less than forty micrometers, wherein forming the substrate includes forming the substrate around the first metal layer of the conductive pad and around the second metal layer of the conductive pad. ### Claim 16 (depends on 13) The method of claim 13, wherein a thickness of the substrate is less than two hundred micrometers. ### Claim 17 A device comprising: a substrate; a conductive pad extending through the substrate, wherein an exposed surface area of the conductive pad on a first side of the substrate is greater than an exposed surface area of the conductive pad on a second side of the substrate, wherein the substrate is coupled to the conductive pad at an interface and the substrate extends laterally from the interface to define a substrate extension; a semiconductor die mounted on the first side of the substrate and electrically connected to the conductive pad; and an outer conductive element positioned on a first side of the substrate extension, wherein the substrate extension defines a recess that is positioned between the semiconductor die and the outer conductive element, wherein the device includes a first breakpoint at the interface and a second breakpoint at the recess, wherein each breakpoint of the first breakpoint and the second breakpoint defines a torque tolerance that is less than a torque tolerance of the device at other points, and wherein the device is configured to break at the first breakpoint or the second breakpoint in response to force being applied to the substrate extension on the first side of the substrate. ### Claim 18 (depends on 17) The device of claim 17, further comprising a printer cartridge, wherein the first side of the substrate extension is adhered to the printer cartridge. ### Claim 19 (depends on 17) The device of claim 17, wherein the conductive pad comprises: a first metal layer that is exposed on the first side of the substrate, wherein a thickness of the first metal layer is greater than ten micrometers and less than forty micrometers; and a second metal layer that is exposed on the second side of the substrate, wherein a thickness of the second metal layer is greater than twenty micrometers and less than seventy micrometers, wherein a width of the first metal layer is greater than a width of the second metal layer, and wherein a length of the first metal layer is greater than a length of the second metal layer. ### Claim 20 (depends on 17) The device of claim 17, wherein a thickness of the substrate is less than two hundred micrometers.