First protective film-forming sheet, method for forming first protective film, and method for manufacturing semiconductor chip
AssigneeLintec Corporation
InventorsMasanori YAMAGISHI, Akinori SATO
Life of this patent
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Abstract
The present invention relates to a first protective film-forming sheet formed by stacking a first pressure-sensitive adhesive layer on a first base material and stacking a curable resin layer on the first pressure-sensitive adhesive layer, in which the curable resin layer is a layer to form a first protective film on a bump-provided surface of a semiconductor wafer by being attached to the surface and cured, a sum of a thickness of the curable resin layer and a thickness of a first pressure-sensitive adhesive layer is 110 μm or more, and the thickness of the curable resin layer is 20 μm to 100 μm.
Claims12
A first protective film-forming sheet formed by stacking a first pressure-sensitive adhesive layer on a first base material and stacking a curable resin layer on the first pressure-sensitive adhesive layer,
- wherein the curable resin layer is a layer to form a first protective film on a bump-provided surface of a semiconductor wafer by being attached to the surface and cured,
- a sum of a thickness of the curable resin layer and a thickness of the first pressure-sensitive adhesive layer is 110 μm or more, and
- the thickness of the curable resin layer is 20 μm to 100 μm.
A method for forming a first protective film that protects a circuit surface and bumps of a semiconductor wafer having the bumps formed on the circuit surface, the method comprising:
- a step of attaching a curable resin layer of a first protective film-forming sheet formed by stacking a first pressure-sensitive adhesive layer on a first base material and stacking the curable resin layer on the first pressure-sensitive adhesive layer to the bump-provided surface of the semiconductor wafer;
- a step of heating the curable resin layer;
- a step of laminating the circuit surface and the bumps of the semiconductor wafer;
- a step of forming the first protective film by curing the curable resin layer;
- and
- a step of peeling the first base material and the first pressure-sensitive adhesive layer,
- wherein a sum of a thickness of the curable resin layer and a thickness of the first pressure-sensitive adhesive layer is 55% or more of a height of the bumps, and the thickness of the curable resin layer is 10% to 50% of the height of the bumps.
A method for manufacturing a semiconductor chip, the method comprising:
- a step of attaching a curable resin layer of a first protective film-forming sheet formed by stacking a first pressure-sensitive adhesive layer on a first base material and stacking the curable resin layer on the first pressure-sensitive adhesive layer to a bump-provided surface of a semiconductor wafer having bumps formed on the circuit surface;
- a step of heating the curable resin layer;
- a step of laminating the circuit surface and the bumps of the semiconductor wafer;
- a step of forming a first protective film that protects the circuit surface and the bumps by curing the curable resin layer;
- a step of peeling the first base material and the first pressure-sensitive adhesive layer;
- and
- a step of dicing and dividing the semiconductor wafer together with the first protective film,
- wherein a sum of a thickness of the curable resin layer and a thickness of the first pressure-sensitive adhesive layer is 55% or more of a height of the bumps, and the thickness of the curable resin layer is 10% to 50% of the height of the bumps.
Dependencies are inferred from the claim text.