# US 2018/0323058 A1 · Method for post chemical mechanical polishing clean

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2018/0323058 A1
- Document ID: US20180323058A1
- Status: Published application
- Kind: A1
- Application number: 15/590,004
- Filed: 2017-05-08
- Published: 2018-11-08
- Earliest claimed: 2017-05-08
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Yi-Liang Ye; Kuang-Hsiu Chen; Chun-Wei Yu; Yu-Ren Wang
- Web page: https://patentgrep.com/patent/US20180323058A1

## CPC

- H10P 70/277: {the processing being a planarisation of conductive layers}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 70/237: {the processing being a planarisation of insulating layers}
- H10P 74/00: Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P 95/04: {Planarisation of conductive or resistive materials}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for post chemical mechanical polishing clean is provided in the present invention, which include the steps of providing a substrate, performing a chemical mechanical polishing process, and performing a plurality of cleaning processes sequentially substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) with different ratios and at different temperatures.

## Claims

### Claim 1

A method for post chemical mechanical polishing clean, comprising:
providing a substrate;
performing a chemical mechanical polishing process on said substrate; and
performing two or more cleaning processes sequentially on said substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) at different temperatures after said chemical mechanical polishing process, wherein volume ratios of H2SO4 to H2O2 in said solutions vary gradiently in different said cleaning processes, and performing said two or more cleaning processes comprises:
performing a first cleaning process by applying said solutions with volume ratio 2:1 of H2SO4 to H2O2 at an equilibrium temperature 230° C.;
performing a second cleaning process by applying said solutions with volume ratio 4:1 of H2SO4 to H2O2 at an equilibrium temperature 210° C.; and
performing a third cleaning process by applying said solutions with volume ratio 9:1 of H2SO4 to H2O2 at an equilibrium temperature 170° C.

### Claim 2 (depends on 1)

The method for post chemical mechanical polishing clean of claim 1, wherein said different temperatures are between 170° C. to 230° C.

### Claim 3 (depends on 1)

The method for post chemical mechanical polishing clean of claim 1, wherein said volume ratios of H2SO4 to H2O2 in said solutions in different said cleaning processes are between 2:1 to 9:1.

### Claim 4 (depends on 1)

The method for post chemical mechanical polishing clean of claim 1, wherein the duration of each said cleaning process is the same.

### Claim 5 (depends on 1)

The method for post chemical mechanical polishing clean of claim 1, wherein said two or more cleaning processes are performed in the same chamber.

### Claim 6 (depends on 1)

The method for post chemical mechanical polishing clean of claim 1, wherein said volume ratios of H2SO4 to H2O2 in said solutions vary gradiently and inversely with said temperatures in different said cleaning processes.

### Claim at position 7

7-8. (canceled)

### Claim 9

A method for post chemical mechanical polishing clean, comprising:
providing a substrate;
performing a chemical mechanical polishing process on said substrate; and
performing two or more cleaning processes sequentially on said substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) at different temperatures after said chemical mechanical polishing process, wherein volume ratios of H2SO4 to H2O2 in said solutions vary gradiently in different said cleaning processes, and performing said two or more cleaning processes comprises:
performing a first cleaning process by applying said solutions with volume ratio 9:1 of H2SO4 to H2O2 at an equilibrium temperature 170° C.;
performing a second cleaning process by applying said solutions with volume ratio 4:1 of H2SO4 to H2O2 at an equilibrium temperature 210° C.; and
performing a third cleaning process by applying said solutions with volume ratio 2:1 of H2SO4 to H2O2 at an equilibrium temperature 230° C.