# US 2018/0322237 A1 · Method and apparatus to correct for patterning process error > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0322237 A1 - Document ID: US20180322237A1 - Status: Published application - Kind: A1 - Application number: 15/769,539 - Filed: 2016-09-26 - Published: 2018-11-08 - Earliest claimed: 2015-10-19 - Assignees: ASML Netherlands B.V. - Applicants: Asml Netherlands B.V. - Inventors: Peter TEN BERGE; Everhardus Corneilis MOS; Richard Johannes Franciscus VAN HAREN; Peter Hanzen WARDENIER; Erik JENSEN - Web page: https://patentgrep.com/patent/US20180322237A1 ## CPC - G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) - G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging - G03F 1/72: Repair or correction of mask defects - G06F 2111/10: Numerical modelling - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model. ## Claims ### Claim 1 A method comprising: modeling, by a hardware computer system, high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model; modeling, by the computer system, a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model; and determining, by the computer system, modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model. ### Claim 2 (depends on 1) The method of claim 1, further comprising modeling a correction of the patterning error that can be made by one or more modification apparatuses of the patterning system using a further correction mathematical model, wherein the further correction mathematical model has a lower resolution than the correction mathematical model. ### Claim 3 (depends on 1) The method of claim 1, wherein high resolution patterning error comprises one or more selected from: errors due to an etch-loading effect, errors due to projection system heating, errors due to patterning device heating, errors due to substrate heating, errors arising from illumination aberration sensitivity, errors in patterning system to patterning system matching, and/or errors in patterning device to patterning device matching. ### Claim 4 (depends on 1) The method of claim 1, further comprising selecting a sample scheme to measure patterning error information using a sample of a plurality of metrology targets on one or more substrates, the selecting based on the error mathematical model and one or more constraints. ### Claim 5 (depends on 1) The method of claim 1, wherein high resolution comprises spatial frequencies on a substrate of 1 mm or less. ### Claim 6 (depends on 1) The method of claim 1, wherein the patterning error information comprises overlay error, dose, focus and/or critical dimension. ### Claim 7 (canceled) ### Claim 8 A system comprising: a hardware processor system; and a non-transitory computer readable storage medium storing machine-readable instructions, wherein when executed, the machine-readable instructions cause the processor system to: model high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model; model a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model; and determine modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model. ### Claim 9 (depends on 8) The system of claim 8, wherein when executed, the machine-readable instructions further cause the processor system to model a correction of the patterning error that can be made by one or more modification apparatuses of the patterning system using a further correction mathematical model, wherein the further correction mathematical model has a lower resolution than the correction mathematical model. ### Claim 10 (depends on 8) The system of claim 8, wherein high resolution patterning error comprises one or more selected from: errors due to an etch-loading effect, errors due to projection system heating, errors due to patterning device heating, errors due to substrate heating, errors arising from illumination aberration sensitivity, errors in patterning system to patterning system matching, and/or errors in patterning device to patterning device matching. ### Claim 11 (depends on 8) The system of claim 8, wherein when executed, the machine-readable instructions further cause the processor system to select a sample scheme to measure patterning error information using a sample of a plurality of metrology targets on one or more substrates, the selecting based on the error mathematical model and one or more constraints. ### Claim 12 (depends on 8) The system of claim 8, wherein high resolution comprises spatial frequencies on a substrate of 1 mm or less. ### Claim 13 (depends on 8) The system of claim 8, wherein the patterning error information comprises overlay error, dose, focus and/or critical dimension. ### Claim 14 (depends on 8) The system of claim 8, wherein when executed, the machine-readable instructions further cause the processor system to cause performance of a correction, determined based on the correction mathematical model, of the patterning error by the patterning device modification tool. ### Claim 15 A non-transitory computer program product comprising machine-readable instructions configured to cause a processor system to at least: model high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model; model a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model; and determine modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model. ### Claim 16 (depends on 15) The computer program product of claim 15, wherein when executed, the machine-readable instructions further cause the processor system to model a correction of the patterning error that can be made by one or more modification apparatuses of the patterning system using a further correction mathematical model, wherein the further correction mathematical model has a lower resolution than the correction mathematical model. ### Claim 17 (depends on 15) The computer program product of claim 15, wherein high resolution patterning error comprises one or more selected from: errors due to an etch-loading effect, errors due to projection system heating, errors due to patterning device heating, errors due to substrate heating, errors arising from illumination aberration sensitivity, errors in patterning system to patterning system matching, and/or errors in patterning device to patterning device matching. ### Claim 18 (depends on 15) The computer program product of claim 15, wherein when executed, the machine-readable instructions further cause the processor system to select a sample scheme to measure patterning error information using a sample of a plurality of metrology targets on one or more substrates, the selecting based on the error mathematical model and one or more constraints. ### Claim 19 (depends on 15) The computer program product of claim 15, wherein high resolution comprises spatial frequencies on a substrate of 1 mm or less. ### Claim 20 (depends on 15) The computer program product of claim 15, wherein the patterning error information comprises overlay error, dose, focus and/or critical dimension. ### Claim 21 (depends on 15) The computer program product of claim 15, wherein when executed, the machine-readable instructions further cause the processor system to cause performance of a correction, determined based on the correction mathematical model, of the patterning error by the patterning device modification tool.