# US 2018/0320652 A1 · Igniter > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0320652 A1 - Document ID: US20180320652A1 - Status: Published application - Kind: A1 - Application number: 15/773,284 - Filed: 2016-10-07 - Published: 2018-11-08 - Earliest claimed: 2015-11-04 - Assignees: Denso Corporation - Applicants: Denso Corporation - Inventors: Motoo YAMAGUCHI; Fujiyuki IWAMOTO; Shunichi TAKEDA - Web page: https://patentgrep.com/patent/US20180320652A1 ## CPC - F02P 3/055: with protective means to prevent damage to the circuit, {e.g. semiconductor devices} or the ignition coil - F02P 3/04: Layout of circuits - F02P 3/053: {using digital techniques} - F02P 15/00: Electric spark ignition having characteristics not provided for in, or of interest apart from, groups F02P1/00 - F02P13/00 {and combined with layout of ignition circuits (not combined F02B, F02C, F02G, F02K)} - H10D 84/00: Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10W 42/80: protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) - H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)} - H10W 70/475: {Capacitors in combination with leadframes} - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 72/00: Interconnections or connectors in packages - H10W 72/50: Bond wires - H10W 90/00: Package configurations - H10W 90/811: {Multiple chips on leadframes} - H10D 8/25: Zener diodes - H10D 84/038: {using silicon technology, e.g. SiGe} - H10W 72/07554: {changes in dispositions} - H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires} - H10W 72/926: {Multiple bond pads having different sizes} - H10W 90/753: {between laterally-adjacent chips} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/759: {between a chip and a laterally-adjacent discrete passive device} - F02P: IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES ({anti-pollution means for internal-combustion engines F02B17/00}; specially adapted for rotary-piston or oscillating-piston engines F02B53/12; {ignition of gas turbine plants F02C7/26; ignition of jet propulsion plants F02K9/95; starting of combustion engines F02N9/00}; ignition of combustion apparatus in general, glowing plugs F23Q; measuring of physical variables in general G01; controlling in general G05; data processing in general G06; electrical components in general see Section H; {ignition coils H01F38/12}; sparking plugs H01T13/00) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An igniter includes a switching element, a control circuit section, and a protection element. The switching element is connected to a primary winding of an ignition coil. The control circuit section is configured to control operation of the switching element. The protection element is configured to electrically protect the control circuit section. The switching element and the protection element are formed in the same semiconductor chip, and are mounted on the same lead frame. ## Claims ### Claim at position 1 1-14. (canceled) ### Claim 15 An igniter comprising: a switching element connected to a primary winding of an ignition coil, a control circuit section configured to control operation of the switching element, and a protection element electrically connected to the control circuit section to electrically protect the control circuit section, wherein the switching element and the protection element are formed in the same semiconductor chip, the igniter further includes, as the protection element, a protective resistor as a resistor arranged on a current path from a DC power source to the control circuit section, a resistor protection Zener diode having a breakdown voltage lower than a dielectric strength voltage of the protective resistor is connected in parallel with the protective resistor, and the resistor protection Zener diode is formed together with the switching element and the protective resistor in the semiconductor chip. ### Claim 16 An igniter comprising: a switching element connected to a primary winding of an ignition coil, a control circuit section configured to control operation of the switching element, and a protection element electrically connected to the control circuit section to electrically protect the control circuit section, wherein the switching element and the protection element are formed in the same semiconductor chip, the igniter further includes, as the protection element, a protective resistor as a resistor arranged on a current path from a DC power source to the control circuit section, the switching element is an IGBT, the semiconductor chip includes a field oxide film for element separation, a gate electrode of the IGBT and the protective resistor are made of polysilicon, the protective resistor is formed on the field oxide film the resistor protection Zener diode having the breakdown voltage lower than the dielectric strength voltage of the protective resistor is connected in parallel with the protective resistor, and the resistor protection Zener diode is made of polysilicon, and is formed at a position adjacent to the protective resistor on the field oxide film. ### Claim 17 An igniter comprising: a switching element connected to a primary winding of an ignition coil, a control circuit section configured to control operation of the switching element, and a protection element electrically connected to the control circuit section to electrically protect the control circuit section, wherein the switching element and the protection element are formed in the same semiconductor chip, the igniter further includes, as the protection element, a protective resistor as a resistor arranged on a current path from a DC power source to the control circuit section, the igniter further includes a semiconductor chip lead frame on which the semiconductor chip is mounted, and a control circuit lead frame on which the control circuit section is mounted, wherein the semiconductor chip lead frame is formed thicker than the control circuit lead frame. ### Claim 18 An igniter comprising: a switching element connected to a primary winding of an ignition coil, a control circuit section configured to control operation of the switching element, and a protection element electrically connected to the control circuit section to electrically protect the control circuit section, wherein the switching element and the protection element are formed in the same semiconductor chip, the igniter further includes a protection Zener diode configured to keep voltage applied to the control circuit section at a constant value as the protection element, the igniter further includes a voltage detection resistor configured to detect voltage applied from the DC power source to the semiconductor chip, and an overvoltage protection circuit configured to forcibly turn off the switching element in a case where the applied voltage reaches higher than a preset value. ### Claim 19 (depends on 18) The igniter according to claim 18, wherein the igniter further includes, as the protection element, a protective resistor as a resistor arranged on a current path from a DC power source to the control circuit section. ### Claim 20 (depends on 15) The igniter according to claim 15, wherein the igniter further includes a capacitor connected in parallel with the DC power source. ### Claim 21 (depends on 15) The igniter according to claim 15, wherein the switching element is an IGBT, the semiconductor chip includes a field oxide film for element separation, a gate electrode of the IGBT and the protective resistor are made of polysilicon, and the protective resistor is formed on the field oxide film. ### Claim 22 (depends on 18) The igniter according to claim 18, wherein the switching element is the IGBT, the semiconductor chip includes a field oxide film for element separation, the gate electrode of the IGBT and the protection Zener diode are made of polysilicon, and the protection Zener diode is formed on the field oxide film. ### Claim 23 (depends on 18) The igniter according to claim 18, wherein the semiconductor chip includes an in-chip ground section connected to a ground, and a low-potential terminal of the protection Zener diode is electrically connected to the in-chip ground section. ### Claim 24 (depends on 18) The igniter according to claim 18, wherein the control circuit section includes an in-control-circuit ground section connected to a ground, and a low-potential terminal of the protection Zener diode is electrically connected to the in-control-circuit ground section. ### Claim 25 (depends on 18) The igniter according to claim 18, wherein the voltage detection resistor is formed in the semiconductor chip. ### Claim 26 (depends on 18) The igniter according to claim 18, wherein the voltage detection resistor is provided separately from the semiconductor chip.