High electron mobility transistor

Abstract

A high electron mobility transistor includes a channel layer, a nitride layer, a source electrode, a drain electrode, a gate electrode, a fluorinated region, and a surface plasma treatment region. The nitride layer is disposed on the channel layer. The source electrode and the drain electrode are disposed above the channel layer. The gate electrode is disposed above the nitride layer and at least partially disposed between the source electrode and the drain electrode in a first direction. The fluorinated region is disposed in the nitride layer. The surface plasma treatment region is at least partially disposed at a top surface of the nitride layer located between the source electrode and the drain electrode. The surface plasma treatment region is separated from the fluorinated region or a fluorine concentration of the surface plasma treatment region is different from a fluorine concentration of the fluorinated region.

Dependencies are inferred from the claim text.