Solid-state imaging device, ad converter, and electronic apparatus
AssigneeSony Corporation
InventorsYusuke IKEDA, Daijiro ANAI, Rei YOSHIKAWA
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Abstract
The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity, and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.
Claims7
A solid-state imaging device, comprising:
- a pixel region including a plurality of pixels that output pixel signals corresponding to an amount of irradiated light, the plurality of pixels being disposed in an array;
- a column signal processing circuit that AD-converts the pixel signals in parallel by a plurality of AD (Analog to Digital) converters, the number of the plurality of AD converters corresponding to the number of columns of the pixels, and
- a reference signal generating circuit that generates a reference signal to which the AD converter refers when the AD converter AD-converts the pixel signals, wherein
- each of the AD converters includes
- a comparator that compares the pixel signal with the reference signal,
- a pixel signal side capacitor connected between a pixel-signal signal line that transmits the pixel signals and one input terminal of the comparator, and
- a reference signal side capacitor connected between a reference-signal signal line that transmits the reference signal and another input terminal of the comparator, and
- the pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity generated between a node at a pixel signal line side of the pixel signal side capacitor connected to an adjacent other AD converter and a node at a comparator side of the reference signal side capacitor, and a second parasitic capacity generated between the node at the pixel signal line side of the pixel signal side capacitor connected to the adjacent other AD converter and a node at a comparator side of the pixel signal side capacitor are substantially the same.
An AD converter, comprising:
- a comparator that compares a first signal with a second signal;
- a first signal side capacitor connected between a first-signal signal line that transmits the first pixel signal and one input terminal of the comparator, and
- a second signal side capacitor connected between a second-signal signal line that transmits the second signal and another input terminal of the comparator, wherein
- the first signal side capacitor and the second signal side capacitor are formed such that a first parasitic capacity generated between a node at a first signal line side of the first signal side capacitor connected to an adjacent other AD converter and a node at a comparator side of the second signal side capacitor, and a second parasitic capacity generated between the node at the first signal line side of the first signal side comparator connected to the adjacent other AD converter and a node at a comparator side of the first signal side capacitor are substantially the same.
An electronic apparatus, comprising:
- a solid-state imaging device including
- a pixel region including a plurality of pixels that output pixel signals corresponding to an amount of irradiated light, the plurality of pixels being disposed in an array,
- a column signal processing circuit that AD-converts the pixel signals in parallel by a plurality of AD converters, the number of the plurality of AD converters corresponding to the number of columns of the pixels, and
- a reference signal generating circuit that generates a reference signal to which the AD converter refers when the AD converter AD-converts the pixel signals,
- each of the AD converters including
- a comparator that compares the pixel signal with the reference signal,
- a pixel signal side capacitor connected between a pixel-signal signal line that transmits the pixel signals and one input terminal of the comparator, and
- a reference signal side capacitor connected between a reference-signal signal line that transmits the reference signal and another input terminal of the comparator,
- the pixel signal side capacitor and the reference signal side capacitor being formed such that a first parasitic capacity generated between a node at a pixel signal line side of the pixel signal side capacitor connected to an adjacent other AD converter and a node at a comparator side of the reference signal side capacitor, and a second parasitic capacity generated between the node at the pixel signal line side of the pixel signal side capacitor connected to the adjacent other AD converter and a node at a comparator side of the pixel signal side capacitor are substantially the same.
Dependencies are inferred from the claim text.