Imaging element

An imaging element, comprising:

• a first chip in which a plurality of light detection circuits are formed in a grid-like configuration;
• and
• a second chip in which a plurality of pixel value storage circuits that receive imaging signals output from the light detection circuits are formed,
• wherein each of the light detection circuits includes:
• a photoelectric conversion element;
• a first floating diffusion;
• a transfer transistor provided between the photoelectric conversion element and the first floating diffusion;
• a first reset transistor which gives a first reset voltage to the first floating diffusion in response to a first reset signal;
• and
• a first amplification transistor which outputs a first imaging signal on the basis of a potential in the first floating diffusion, and
• wherein each of the pixel value storage circuits of the second chip includes:
• a pixel value storage capacitance having one end to which a grounding voltage is given;
• a second floating diffusion;
• an input transfer transistor having one end to which the first imaging signal is input and the other end coupled to the other end of the pixel value storage capacitance;
• an output transfer transistor having one end coupled to the other end of the pixel value storage capacitance and the other end coupled to the second floating diffusion;
• a second reset transistor which gives a second reset voltage to the second floating diffusion in response to a second reset signal;
• and
• a second amplification transistor which outputs a second imaging signal on the basis of a potential in the second floating diffusion.