Solid-state imaging device and imaging system

A solid-state imaging device comprising:

• a plurality of pixels each of which includes:
• a photoelectric conversion portion which photoelectrically converts incident light to generate a signal charge;
• a charge holding portion that accumulates the signal charge transferred from the photoelectric conversion portion;
• a floating diffusion region to which the signal charge of the charge holding portion is transferred;
• a first transfer gate configured to transfer the signal charge from the photoelectric conversion portion to the charge holding portion;
• and
• a second transfer gate configured to transfer the signal charge from the charge holding portion to the floating diffusion region,
• wherein:
• the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type including a majority carrier of a polarity of the signal charge formed under the first semiconductor region,
• the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region,
• in a cross section including the charge holding portion, the floating diffusion region and the second transfer gate, a second side edge of the fourth semiconductor region on the floating diffusion region side is provided between the floating diffusion region and a second side edge of the third semiconductor region on the floating diffusion region side, and
• in the cross section, the floating diffusion region and the fourth semiconductor region are isolated by a semiconductor region of the first conductivity type, the semiconductor region being in contact with a surface of a semiconductor substrate.