Display device and method for manufacturing display device
AssigneeJapan Display Inc.
InventorHironori TOYODA
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Abstract
To provide a display device including a light emitting element layer including an anode electrode, a light emissive layer formed on the anode electrode, and a cathode electrode formed on the light emissive layer, and a bank formed on the lower electrode and having an opening, in which the lower electrode is partially exposed, wherein the light emissive layer includes a p-doped hole transport layer containing p-dopant, and the p-doped hole transport layer contains a larger amount of p-dopant in an area close to an end portion of the opening of the bank than the amount of p-dopant contained in other areas.
Claims8
A display device, comprising:
- a light emitting element layer including
- a lower electrode,
- a light emissive layer formed on the lower electrode, and
- an upper electrode formed on the light emissive layer;
- and
- an insulating layer formed on the lower electrode and having an opening, in which the lower electrode is partially exposed,
- wherein
- the light emissive layer includes a p-doped hole transport layer containing p-dopant, and
- the p-doped hole transport layer contains a larger amount of p-dopant in an area close to an end portion of the opening of the insulating layer than an amount of p-dopant contained in other areas.
A method for manufacturing a display device, comprising:
- a step of forming a lower electrode;
- a step of forming an insulating layer on the lower electrode, the insulating layer having an opening, in which the lower electrode is partially exposed;
- a step of forming a hole transport layer on the insulating layer and a part of the lower electrode, the part being exposed in the opening;
- a step of injecting p-dopant into the hole transport layer to thereby form a p-doped hole transport layer;
- a step of applying thermal processing to the p-doped hole transport layer;
- a step of additionally injecting p-dopant into the p-doped hole transport layer in an area close to an end portion of the opening of the insulating layer;
- a step of forming a light emissive layer on the p-doped hole transport layer;
- and
- a step of forming an upper electrode on the light emissive layer.
Dependencies are inferred from the claim text.